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pro vyhledávání: '"Bruce A. Smith"'
Autor:
Bruce R. Smith
Publikováno v:
Face-to-Face in Shakespearean Drama
To face: shifting attention from the noun to the verb changes the dynamics of the interface. To face a person, an object, or a situation is an act of volition. The actor’s own face becomes several things at once: an exteriorization of the actor’s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e4add5846f6dc986b2f03beb0daa0f7
https://doi.org/10.3366/edinburgh/9781474435680.003.0002
https://doi.org/10.3366/edinburgh/9781474435680.003.0002
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
The non-zero chief ray angle at the object (CRAO) in EUVL systems introduces azimuthally asymmetric phase shifts. Understanding and characterizing these effects is critical to EUVL system and mask design. The effects of 3D mask absorber geometry on d
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2116-2120
The degradation of projected images using TM polarization is not intrinsic because losses in image contrast can be recoverable. By controlling the photoresist/substrate interface reflectivity, high modulation for TM polarization can be maintained for
Publikováno v:
SPIE Proceedings.
As EUV lithography attempts to outperform other lithographical methods to the sub-14 nm node, the demand for a larger NA traditionally dominates the drive for scaling. There are, however, many challenges to overcome in order to accomplish this [1]. D
Autor:
Bruce W. Smith
Optical projection lithography has been the predominant method of micro- and nano-patterning for most semiconductor and nanotechnology applications. This chapter addresses the approaches, systems, and materials that have been used, as optical lithogr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e3f2def9626cc17c2f804930c82450f
https://doi.org/10.1533/9780857098757.1
https://doi.org/10.1533/9780857098757.1
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
Extreme Ultraviolet Lithography (EUVL) at 13.5 nm is currently the most promising technology for advanced integrated circuit (IC) manufacturing nodes. Since the wavelength for EUVL is an order of magnitude smaller than current optical lithography sys
Autor:
Bruce W. Smith, Chris Maloney
Publikováno v:
SPIE Proceedings.
Extreme UV Lithography (EUVL) is generally accepted as the leading candidate for next generation lithography. Several challenges remain for EUVL, especially as its insertion point is pushed to finer resolution. Although diffractive scaling may sugges
Autor:
Andrew Estroff, Bruce W. Smith
Publikováno v:
International Journal of Optics, Vol 2012 (2012)
The unique properties of metamaterials, namely, their negative refractive index, permittivity, or permeability, have gained much recent attention. Research into these materials has led to the realization of a host of applications that may be useful t
Publikováno v:
SPIE Proceedings.
The unique properties of metamaterials, namely their negative refractive index, permittivity, and permeability, have gained much recent attention. Research into these materials has led to the realization of a host of applications that may be useful t
Publikováno v:
Applied Physics Letters. 77:3284-3286
Iridium field emitter arrays were fabricated using Spindt tip process. Ir field emitter cones show an aspect ratio of 0.95, slightly less than Mo field emitter arrays fabricated using the same microfabrication process. When compared to the Mo field e