Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Tadahiro Ohmi"'
Autor:
Y. Kumagai, Tadahiro Ohmi, S. Sugawa, Rihito Kuroda, Akinobu Teramoto, T. Inatsuka, Tomoyuki Suwa
Publikováno v:
IEEE Transactions on Electron Devices. 58:3307-3313
Using the array test pattern, gate current through the tunnel oxide on the order of 10-16 A can be measured for about 1 000 000 transistors within 4 min. Because this test pattern can be fabricated by simple processes and its peripheral circuits are
Publikováno v:
Journal of the Korean Physical Society. 59:391-401
Current silicon technologies are now facing very severe limitations such as no more progress on the speed performance of microprocessors from Intel at around a 3-GHz clock rate, for 5 years. Current silicon technologies can fabricate large scale inte
Publikováno v:
IEEE Transactions on Electron Devices. 57:1597-1607
A study of the impact of the channel direction over the effective mobility and the 1/f noise in MOSFETs fabricated on (100) and (110) silicon-oriented wafers finding its outcome in the fabrication of future nonplanar device structures has been done.
Publikováno v:
Solid-State Electronics. 54:420-426
The paper deals with the investigation of the hole mobility in p-channel MOS transistors fabricated on (1 1 0) oriented silicon wafers. At first, we showed that the conventional methods used to extract the conduction parameters such as the low field
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 22:126-133
In this work, a new electrical characterization method for MOSFETs using an in-wafer Kelvin-contact device structure is developed. The developed method can eliminate the parasitic series resistance such as resistance in source/drain terminals of MOSF
Publikováno v:
Japanese Journal of Applied Physics. 47:2668-2671
This work demonstrates the performance comparison of ultrathin fully depleted (FD) silicon on insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) with various structures. The current drivability and immunity to the short
Publikováno v:
IEEE Transactions on Electron Devices. 54:1471-1477
Current silicon technologies are now facing very severe standstill, i.e., the operation speed is strictly limited at a clock rate of about 3.8 GHz due to the limitation of the thinning of the gate insulator film thickness because of its large amount
Autor:
Genya Fujita, Tomoyuki Suwa, Hiroto Takahashi, Tadahiro Ohmi, Akinobu Teramoto, Yuki Kumagai, Shigetoshi Sugawa
Publikováno v:
Japanese Journal of Applied Physics. 46:2148-2152
The gate leakage current which influences the charge hold time of flash memories is characterized as very localized in tunnel oxide area. And the leakage current value is relatively low as the quantity of the current. In conventional test-element-gro
Publikováno v:
Japanese Journal of Applied Physics. 46:2054-2057
Evaluating the statistical variation of the metal–oxide–semiconductor field-effect transistors (MOSFETs) is important for realizing the accurate analog circuits and highly large-scale-integration (LSI) devices. In this paper, a new evaluation met
Publikováno v:
AIP Conference Proceedings 19th International Conference on NOISE AND FLUCTUATIONS-ICNF2007. 922:43-46
In this paper we present the study of 1/f noise in SOI n‐ and p‐MOSFET fabricated on Si(100) and Si(110) oriented wafers. A comparison of noise performances are first presented, then the impact of the in‐plane channel direction on the low frequ