Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Yahya Moubarak Meziani"'
Autor:
Jesus E. Velázquez-Pérez, Pavel F. Baranov, Yahya Moubarak Meziani, Miguel Ferrando-Bataller, Jaime Calvo-Gallego, Kristel Fobelets, Juan Salvador-Sánchez, Igor V. Minin, Oleg V. Minin, Juan A. Delgado-Notario
Publikováno v:
Emerging Imaging and Sensing Technologies for Security and Defence VI.
In the present work, we report on resolution enhancement of a terahertz imaging system using the terajet effect. A wavelength-scaled particle (a Te on cube for simplicity) was used to localize incident radiation to a subwavelength volume and focus it
Autor:
Yahya Moubarak Meziani, Juan A. Delgado-Notario, Igor V. Minin, Kristel Fobelets, Oleg V. Minin, Jaime Calvo-Gallego, Miguel Ferrando-Bataller, Jesus E. Velázquez-Pérez, Juan Salvador-Sánchez
Publikováno v:
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
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[EN] We report on the enhancement of responsivity by more than one order of magnitude of a silicon-based sub-terahertz detector when a mesoscopic dielectric particle was used to localize incident radiation to a sub-wavelength volume and focus it dire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4cbc41c549dd5e20541e776b62029f2
https://doi.org/10.1364/ol.431175
https://doi.org/10.1364/ol.431175
Publikováno v:
Optical Engineering. 60
A simple millimeter wave and terahertz (THz) receiver scheme that uses subwavelength focusing of electromagnetic beam on the point-contact detector area with waveguide dimensions is studied. A detection system with such an optical coupling scheme is
Autor:
Enrique Diez, Deepika Yadav, Kenji Watanabe, J. E. Velazquez, Taiichi Otsuji, Takuya Taniguchi, Yahya Moubarak Meziani, J. A. Delgado Notario, Vito Clericò
Publikováno v:
2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
We report on detection of terahertz radiation by using bilayer graphene-based FET with asymmetric grating gates. The device was fabricated with a stack of h-BN/Graphene/h-BN with a back gate as well as an asymmetric dual grating top gates. It was sub
Autor:
Enrique Diez, Jaime Calvo-Gallego, J. E. Velazquez, Yahya Moubarak Meziani, Elham Javadi, J. A. Delgado Notario, Kristel Fobelets
Publikováno v:
ResearcherID
We report on room temperature non-resonant detection of terahertz radiation using strained Silicon MODFETs with nanoscale gate lengths. The devices were excited at room temperature by an electronic source at 150 and 300 GHz. A maximum intensity of th
Autor:
Yahya Moubarak Meziani, V. V. Popov, Hiroaki Minamide, Denis V. Fateev, Taiichi Otsuji, Hiromasa Ito, Yuye Wang, Wojciech Knap, Stephane Boubanga Tombet, Takayuki Watanabe, D. Coquillat, Yudai Tanimoto
Publikováno v:
Solid-State Electronics
Proceedings of SPIE
TERAHERTZ PHYSICS, DEVICES, AND SYSTEMS VI: ADVANCED APPLICATIONS IN INDUSTRY AND DEFENSE
Solid-State Electronics, Elsevier, 2012, 78, pp.109-114. ⟨10.1016/j.sse.2012.05.047⟩
Proceedings of SPIE
TERAHERTZ PHYSICS, DEVICES, AND SYSTEMS VI: ADVANCED APPLICATIONS IN INDUSTRY AND DEFENSE
Solid-State Electronics, Elsevier, 2012, 78, pp.109-114. ⟨10.1016/j.sse.2012.05.047⟩
We report on ultrahigh sensitive, broadband terahertz (THz) detectors based on asymmetric dual-grating-gate (A-DGG) high electron mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz with a superior low noise equivalent powe
Autor:
Tetsuya Suemitsu, Eiichi Sano, Taiichi Otsuji, T. Nishimura, Yahya Moubarak Meziani, Yuki Tsuda
Publikováno v:
International Journal of High Speed Electronics and Systems. 19:33-53
Two dimensional plasmons in submicron transistors have attracted much attention due to their nature of promoting emission/detection of electromagnetic radiation in the terahertz range. We have recently proposed and fabricated a highly efficient, broa
Publikováno v:
Solid-State Electronics. 51:1319-1327
We have designed and fabricated an optically-pumped plasmon-resonant terahertz emitter incorporating doubly interdigitated grating gates and a vertical cavity into an InGaP/InGaAs/GaAs high-electron mobility transistor structure. The two-dimensional
Publikováno v:
Japanese Journal of Applied Physics. 46:2409-2412
The new doubly interdigitated grating gate high-electron-mobility transistor (HEMT) has been subjected at room temperature to a 1.5 µm cw laser beam. The observed photoresponse shows a threshold behavior as a function of drain-to-source bias for dif
Autor:
Tetsuya Suemitsu, Hiroaki Minamide, Denis V. Fateev, Akira Satou, Wojciech Knap, F. Kasuya, Dominique Coquillat, Yahya Moubarak Meziani, Tetsuya Kawasaki, Yuma Takida, Stephane Boubanga Tombet, Taiichi Otsuji, Shinya Hatakeyama, Guillaume Ducournau, Hiromasa Ito, Vyacheslav V. Popov
Publikováno v:
International Conference on Infrared Millimeter and Terahertz Waves
40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015
40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015, Aug 2015, Hong Kong, China. paper WS-45, 2 p., ⟨10.1109/IRMMW-THz.2015.7327926⟩
40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015
40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015, Aug 2015, Hong Kong, China. paper WS-45, 2 p., ⟨10.1109/IRMMW-THz.2015.7327926⟩
International audience; We report on the intrinsic responsivity of an asymmetric dual-grating-gate plasmonic detector over 100 kV/W at 200 GHz and 50 kV/W at 300 GHz measured at room temperature with zero source-drain bias. We demonstrate that broadb