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pro vyhledávání: '"Bruce A. Smith"'
Autor:
Rajiv N. Sejpal, Bruce W. Smith
Publikováno v:
Photomask Technology 2021.
Alternatives to Ta-based absorbers are being considered for next generation lithography nodes to reduce 3D mask effects and to improve image modulation through phase interference. Low complex refractive index (n – ik) materials can provide phase sh
Autor:
Rajiv N. Sejpal, Bruce W. Smith
Publikováno v:
Journal of Vacuum Science & Technology B. 39:062604
Pattern transfer in an extreme ultraviolet lithography (EUVL) system requires reflective optical elements illuminated at oblique illumination angles. This, in combination with the three-dimensional effects at the mask, is the source of the so-called
Autor:
Kazuaki Suzuki, Bruce W. Smith
EXPOSURE SYSTEM System Overview of Optical Steppers and Scanners Michael S. Hibbs Optical Lithography Modeling Chris A. Mack Optics for Photolithography Bruce W. Smith Excimer Laser for Advanced Microlithography Palash Das Alignment and Overlay Gregg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bda2a6360ba0971d432f32d4482e3f0f
https://doi.org/10.1201/9781315117171
https://doi.org/10.1201/9781315117171
Autor:
Zac Levinson, Bruce W. Smith
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
Aberrations must be sufficiently controlled to make moving to a higher numerical aperture worthwhile. Traditional isomorphic imaging systems form the same image regardless of their rotation. Likewise, the aberration basis chosen for isomorphic optics
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
As extreme ultraviolet lithography (EUVL) technology progresses towards and below sub-7nm generations, polarization effects will begin to have an impact. Moving to higher NA will introduce polarization effects at all locations: the mask plane, the op
Autor:
Bruce W. Smith, Lilian Neim
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2019.
As the extreme ultraviolet (EUV) lithography technology progresses towards and below sub-7nm generations, polarization effects will begin to have an impact. As numerical apertures increase, the consequences at both the mask and the wafer plane need t
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2018.
As the power of laser produced plasma sources has increased, EUV lens heating has become a major component of process variation. Differential lens heating can cause thermal aberrations which affect system drift during operation, therefore pupil plane
Autor:
Bruce W. Smith, Zac Levinson
Publikováno v:
SPIE Proceedings.
Next-generation EUV lithography systems will use anamorphic optics to achieve high-NA. The well-known Zernike circle polynomials do not describe the sixteen primary aberrations of these anamorphic optical systems though. We propose to use a basis whi
Autor:
Markus P. Benk, Kenneth A. Goldberg, Obert Wood, Pawitter Mangat, Erik Verduijn, Antoine Wojdyla, Bruce W. Smith, Zachary Levinson
Publikováno v:
Levinson, Z; Verduijn, E; Wood, OR; Mangat, P; Goldberg, KA; Benk, MP; et al.(2016). Measurement of euv lithography pupil amplitude and phase variation via image-based methodology. Journal of Micro/ Nanolithography, MEMS, and MOEMS, 15(2). doi: 10.1117/1.JMM.15.2.023508. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/8qr2d001
Journal of Micro/ Nanolithography, MEMS, and MOEMS, vol 15, iss 2
Journal of Micro/Nanopatterning Materials and Metrology, vol 15, iss 2
Journal of Micro/ Nanolithography, MEMS, and MOEMS, vol 15, iss 2
Journal of Micro/Nanopatterning Materials and Metrology, vol 15, iss 2
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE). An approach to image-based EUV aberration metrology using binary mask targets and iterative model-based solutions to extract both the amplitude and phase components of the aberrated p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::357de8cdede9beeeb4891c8a01137ab8
http://www.escholarship.org/uc/item/8qr2d001
http://www.escholarship.org/uc/item/8qr2d001
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
The non-zero chief ray angle at the object (CRAO) in EUVL systems introduces azimuthally asymmetric phase shifts. Understanding and characterizing these effects is critical to EUVL system and mask design. The effects of 3D mask absorber geometry on d