Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Hyejin Jeon"'
Autor:
M.H. Lee, H. Park, M.W. Lee, Jin-A Jeon, H.S. Lee, Hyejin Jeon, S.J. Song, H.J. Hyun, H.Y. Lee
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 924:14-18
A position-sensitive pixel array silicon detector with a junction field effect transistor (JFET) switch structure is studied as a device for the direct illumination of X-ray from synchrotron light source. Considering an absorption length of silicon a
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 912:350-353
In this study, we manufactured silicon PIN photodiodes coupled with a scintillator for X-ray detection in cargo inspections. The classification of photodiodes is made based on their depletion characteristics into two categories: fully depleted (FD) s
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 912:238-240
The photoelectric absorption of gamma rays in silicon occurs with such low probability that scintillation material is employed in the photostrip detector. We fabricate single-sided photostrip sensors which are sensitive to visible light. Two photodet
Autor:
Kyung-Ku Kang, Hyeyoung Lee, Manwoo Lee, Hyejin Jeon, Sin-Hyung Lee, J.M. Baek, H. Park, Jun Young Kim
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 978:164419
We fabricated a pixelated silicon sensor with a junction field effect transistor (JFET) on a 650 μ m thick, high-resistivity ( > 5 k Ω ⋅ cm) n-type double-sided polished 6-in. silicon wafer using a double-sided fabrication process. The JFET, whic