Zobrazeno 1 - 4
of 4
pro vyhledávání: '"G. Cautero"'
Autor:
Giorgio Biasiol, Fulvia Arfelli, G. Cautero, A. Pilotto, C. Nichetti, T. Steinhartova, David Esseni, M. Antonelli, Francesco Driussi, R.H. Menk, Luca Selmi, Pierpaolo Palestri
Publikováno v:
Solid-state electronics 168 (2020). doi:10.1016/j.sse.2019.107728
info:cnr-pdr/source/autori:Pilotto, A.; Nichetti, C.; Palestri, P.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; Driussi, F.; Esseni, D.; Menk, R. H.; Steinhartova, T./titolo:Optimization of GaAs%2FAlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization/doi:10.1016%2Fj.sse.2019.107728/rivista:Solid-state electronics/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:168
info:cnr-pdr/source/autori:Pilotto, A.; Nichetti, C.; Palestri, P.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; Driussi, F.; Esseni, D.; Menk, R. H.; Steinhartova, T./titolo:Optimization of GaAs%2FAlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization/doi:10.1016%2Fj.sse.2019.107728/rivista:Solid-state electronics/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:168
A recently developed nonlocal history dependent model for electron and hole impact ionization is used to compute the gain and the excess noise factor in avalanche photodiodes featuring heterojunctions of III-V compound semiconductors while accounting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94b791e9eb224e4ef0594521a83538b8
https://hdl.handle.net/11380/1206544
https://hdl.handle.net/11380/1206544
Autor:
Luca Selmi, C. Nichetti, Pierpaolo Palestri, G. Cautero, Fulvia Arfelli, T. Steinhartova, M. Antonelli, Giorgio Biasiol, Francesco Driussi, A. Pilotto, R.H. Menk
Publikováno v:
Journal of instrumentation 14 (2019). doi:10.1088/1748-0221/14/01/C01003
info:cnr-pdr/source/autori:Nichetti C.; Steinhartova T.; Antonelli M.; Cautero G.; Menk R.H.; Pilotto A.; Driussi F.; Palestri P.; Selmi L.; Arfelli F.; Biasiol G./titolo:Gain and noise in GaAs%2FAlGaAs avalanche photodiodes with thin multiplication regions/doi:10.1088%2F1748-0221%2F14%2F01%2FC01003/rivista:Journal of instrumentation/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume:14
info:cnr-pdr/source/autori:Nichetti C.; Steinhartova T.; Antonelli M.; Cautero G.; Menk R.H.; Pilotto A.; Driussi F.; Palestri P.; Selmi L.; Arfelli F.; Biasiol G./titolo:Gain and noise in GaAs%2FAlGaAs avalanche photodiodes with thin multiplication regions/doi:10.1088%2F1748-0221%2F14%2F01%2FC01003/rivista:Journal of instrumentation/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume:14
Avalanche photodiodes based on GaAs/AlGaAs with separated absorption and multi- plication regions (SAM-APDs) will be discussed in terms of capacitance, response to light (gain and noise) and time response. The structures have been fabricated by molec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1d33a3e496d611a0c7fb30f06dc9fa8
https://hdl.handle.net/11380/1169426
https://hdl.handle.net/11380/1169426
Autor:
Giorgio Biasiol, T. Steinhartova, R.H. Menk, Francesco Driussi, David Esseni, Fulvia Arfelli, A. Pilotto, M. Antonelli, Pierpaolo Palestri, Luca Selmi, C. Nichetti, G. Cautero
Publikováno v:
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble (FR), 2019
info:cnr-pdr/source/autori:Pilotto A.; Esseni D.; Menk R.H.; Steinhartova T.; Nichetti C.; Palestri P.; Selmi L.; Antonelli M.; Arfelli F.; Biasiol G.; Cautero G.; Driussi F./congresso_nome:2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)/congresso_luogo:Grenoble (FR)/congresso_data:2019/anno:2019/pagina_da:/pagina_a:/intervallo_pagine
info:cnr-pdr/source/autori:Pilotto A.; Esseni D.; Menk R.H.; Steinhartova T.; Nichetti C.; Palestri P.; Selmi L.; Antonelli M.; Arfelli F.; Biasiol G.; Cautero G.; Driussi F./congresso_nome:2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)/congresso_luogo:Grenoble (FR)/congresso_data:2019/anno:2019/pagina_da:/pagina_a:/intervallo_pagine
We report simulation results for gain and noise in avalanche photodiodes fabricated using heterojunctions of III-V compound semiconductors. We employ a recently developed nonlocal model for impact ionization. The model has been calibrated and validat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69efd47e579404bf329206525b37471d
https://hdl.handle.net/11380/1200316
https://hdl.handle.net/11380/1200316
Autor:
M. Cautero, L. Iviani, R. Borghes, D. Cocco, G. Cautero, Fulvio Billè, B. Krastanov, R. Signorato, Giovanni Sostero
Publikováno v:
AIP Conference Proceedings.
An important feature of X‐ray Piezoelectric Bimorph Mirror (PBM) is the possibility to continuously vary its curvature (dynamical bending); this ability allows the precise adjustment of their optical properties to different beamline geometries and