Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Yi, Xiaoyan"'
Akademický článek
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Autor:
Ren, Fang, Yin, Yue, Wang, Yunyu, Liu, Zhiqiang, Meng, LIang, Ou, Haiyan, Ao, Jinping, Wei, Tongbo, Yan, Jiancheng, Yuan, Guodong, Yi, Xiaoyan, Wang, Junxi, Li, Jinmin, Dheeraj, Dasa, Weman, Helge
Publikováno v:
2372-?
Materials, Vol 11, Iss 12, p 2372 (2018)
Ren, F, Yin, Y, Wang, Y, Liu, Z, Liang, M, Ou, H, Ao, J, Wei, T, Yan, J, Yuan, G, Yi, X, Wang, J & Li, J 2018, ' Direct Growth Of AlGaN nanorod LEDs on graphene-covered Si ', Materials, vol. 11, no. 12, 2372 . https://doi.org/10.3390/ma11122372
Materials
Volume 11
Issue 12
Materials, Vol 11, Iss 12, p 2372 (2018)
Ren, F, Yin, Y, Wang, Y, Liu, Z, Liang, M, Ou, H, Ao, J, Wei, T, Yan, J, Yuan, G, Yi, X, Wang, J & Li, J 2018, ' Direct Growth Of AlGaN nanorod LEDs on graphene-covered Si ', Materials, vol. 11, no. 12, 2372 . https://doi.org/10.3390/ma11122372
Materials
Volume 11
Issue 12
High density of defects and stress owing to the lattice and thermal mismatch between nitride materials and heterogeneous substrates have always been important problems and limit the development of nitride materials. In this paper, AlGaN light-emittin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93779ad8761fea5818d519130a8ac574
http://hdl.handle.net/11250/2595098
http://hdl.handle.net/11250/2595098
Akademický článek
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Publikováno v:
Journal of Semiconductors. 37:061001
Due to their low power consumption, long lifetime and high efficiency, nitrides based white light-emitting-diodes (LEDs) have long been considered to be a promising technology for next generation illumination. In this work, we provide a brief review
Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriers
Publikováno v:
Journal of Semiconductors. 36:054006
The characteristics of nitride-based blue light-emitting diodes (LEDs) with AlGaN composition-graded barriers are analyzed numerically. The carrier concentrations in the quantum wells (QWs), the energy band diagrams, the electrostatic fields, and the
Autor:
Ji Xiaoli, Liu Na, Guo Enqing, Liang Meng, Yi Xiaoyan, Wang Junxi, Si Zhao, Li Jinmin, Liu Zhiqiang, Feng Xiang-Xu, Lu Hongxi, Wei Xuecheng, Zhang Ning
Publikováno v:
Journal of Semiconductors. 35:024010
The advantages of the p-AlInGaN/GaN superlattices' (SLs) structure as an electron blocking layer (EBL) for InGaN blue light-emitting diodes (LEDs) were studied by experiment and APSYS simulation. Electroluminescence (EL) measurement results show that
Autor:
Yao Ran, Li Jing, Wang Bing, Yi Xiaoyan, Deng Yuanming, Wang Guohong, Li Panpan, Li Hongjian, Li Jinmin, Liang Meng, Li Zhicong
Publikováno v:
Journal of Semiconductors. 32:114007
Through insertion of an AlGaN/GaN stack between the u-GaN and n-GaN of GaN-based light-emitting diodes (LEDs), the strain in the epilayer was increased, the dislocation density was reduced. GaN-based LEDs with different Al compositions were compared.
Optical and electrical characteristics of GaN vertical light emitting diode with current block layer
Publikováno v:
Journal of Semiconductors. 32:064007
A GaN vertical light emitting diode (LED) with a current block layer (CBL) was investigated. Vertical LEDs without a CBL, with a non-ohmic contact CBL and with a silicon dioxide CBL were fabricated. Optical and electrical tests were carried out. The
Akademický článek
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Autor:
Yang Hua, Duan Yao, Li Zhicong, Wang Guohong, Ruan Jun, Zeng Yiping, Wang Xiaofeng, Yi Xiaoyan
Publikováno v:
Journal of Semiconductors. 30:094002
Gallium nitride (GaN) based light emitting diodes (LEDs) with a thick and high quality ZnO film as a current spreading layer grown by metal-source vapor phase epitaxy (MVPE) are fabricated successfully. Compared with GaN-based LEDs employing a Ni/Au