Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Fuei Pien Chee"'
Publikováno v:
Key Engineering Materials. 706:51-54
Neutron bombardment on semiconductor material causes defects, one such primary physical effect is the formation of displacement defects within the crystal lattice structure, and such defects effectively decrease the mean free path and thus shorten th
Autor:
Afishah Alias, D S Mivolil, Khairul Anuar, Saafie Salleh, Fuei Pien Chee, Khairul Anuar Mohd Salleh, Rosfayanti Rasmidi, Abi Muttaqin Jalal Bayar, Mivolil Duinong
Publikováno v:
ECS Journal of Solid State Science and Technology. 9:045019
In this research, n-ZnO/p-CuGaO2 based semiconductor devices were fabricated and exposed to gamma rays with increasing total ionizing dose (TID) and neutron fluence at different flux. Based on the I-V properties, the decrease in the turn-on voltage o
Publikováno v:
AIP Conference Proceedings.
Neutron radiation causes significant changes in the characteristics of MOS devices by the creation of oxide-trapped charge and interface traps. The degradation of the current gain of the GF4936 dual n-channel depletion mode MOS transistor, caused by
Publikováno v:
2014 International Conference on Computational Science and Technology (ICCST).
Study for penetration of nuclear radiation into semiconductor materials had been of theoretical interest and of practical important in these recent years, driven by the scaling down of semiconductor materials. This paper reviews the typical effects o