Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Sergey Gorelick"'
Publikováno v:
Nanotechnology. 30:085301
We present a device capable of combining nanofluidics and cryogenic transmission electron microscopy (cryo-TEM) to allow inspection of water-soluble samples under near-native conditions. The devices can be produced in a multitude of designs, but as a
Autor:
Birgit Päivänranta, Sergey Gorelick, Reto Giannini, Hannes Merbold, Jörg F. Löffler, Luca Büchi, Yasin Ekinci, Christian David, Thomas Feurer
Publikováno v:
Päivänranta, B, Merbold, H, Giannini, R, Büchi, L, Gorelick, S, David, C, Löffler, J F, Feurer, T & Ekinci, Y 2011, ' High aspect ratio plasmonic nanostructures for sensing applications ', ACS Nano, vol. 5, no. 8, pp. 6374-6382 . https://doi.org/10.1021/nn201529x
We present an experimental and theoretical study of plasmonic modes in high aspect ratio nanostructures in the visible wavelength region and demonstrate their high performance for sensing applications. Ordered and well-defined plasmonic structures wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e50e0f1c03ba302208a1fcf15f126a1c
https://cris.vtt.fi/en/publications/c4bc4266-c74f-48a1-8aa0-4d84d497b94b
https://cris.vtt.fi/en/publications/c4bc4266-c74f-48a1-8aa0-4d84d497b94b
Publikováno v:
Vila-Comamala, J, Gorelick, S, Guzenko, V A & David, C 2011, ' 3D Nanostructuring of hydrogen silsesquioxane resist by 100 keV electron beam lithography ', Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, vol. 29, no. 6, 06F301 . https://doi.org/10.1116/1.3629811
The authors investigated the three-dimensional nanostructuring of hydrogen silsesquioxane (HSQ) resist by multiple-step 100 keV electron beam lithography. Consecutive overlay exposures were used to create two- and three-levels in high aspect ratio HS
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27:1109
The capability of collimators to define beams of MeV ions with sub-100nm dimensions has recently been demonstrated. Such nanometer beams have potential applications in MeV ion-beam lithography, which is the only maskless technique capable of producin
Aperture-edge scattering in MeV ion-beam lithography. I. Scattering from a straight Ta aperture edge
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27:1101
Collimators are widely used to define MeV ion beams. Recent studies have shown the capability of collimators to define beams of MeV ions with sub-100nm dimensions. Such nanometer beams have potential applications in MeV ion-beam lithography, which is