Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Xi Mao"'
Publikováno v:
Journal of Crystal Growth. 252:251-256
In this paper, CdS nanocrystallites are prepared by encapsulation in poly (ethylene oxide) polymer (PEO). It is found that PEO could provide a confined environment for particle neucleation and crystallite growth of CdS nanocrystallites. The absorptio
Publikováno v:
Acta Materialia. 50:5085-5090
In this work, a convenient method combining physical and chemical templates is presented to obtain a regular arrangement of CdS nanocrystallites. Poly (ethylene oxide) (PEO) is used to control the crystallite sizes as a chemical template and Si-based
Publikováno v:
Physics Letters A. 300:307-310
Ge-doped SiO 2 films were deposited on p -Si substrates by magnetron sputtering and metal–insulator–semiconductor (MIS) structures were fabricated with semitransparent Au layers on SiO 2 films. The MIS structures exhibit electroluminescence (EL)
Publikováno v:
Applied Physics A Materials Science & Processing. 71:299-303
Luminescent SiO2 films containing Ge nanocrystals are fabricated by using Ge ion implantation, and metal–oxide–semiconductor structures employing these films as the active layers show yellow electroluminescence (EL) under both forward and reverse
Publikováno v:
Journal of Applied Physics. 86:6139-6142
Luminescent SiO2 films containing Ge nanocrystals (nc-Ge) are fabricated by Ge+ ion implantation and thermal annealing. The nc-Ge density is controlled by the implanted Ge+ dose. Under ultraviolet excitation, the films exhibit two photoluminescent (P
Publikováno v:
Applied Physics A: Materials Science & Processing. 67:213-217
implanted SiO2 films is studied as a function of different fabricating conditions (implantation dose, annealing temperature and time). The SiO2 films containing Ge nanocrystals exhibit two photoluminescence (PL) bands peaked at 600 nm and 780 nm. The
Autor:
Xinglong Wu, Duan Feng, X.Y. Yuan, Xiaoqian Zhang, S. S. Jiang, S. Tong, Xiang-na Liu, Xi-Mao Bao
Publikováno v:
Solid State Communications. 104:355-359
Raman spectra of hydrogenated nanocrystalline silicon films clearly exhibit two size- and crystalline-fraction-dependent spectral regions related to the structural properties of nanocrystals. One is the crystalline band from crystallite core consisti
Publikováno v:
Solid State Communications. 97:1039-1042
implanted SiO2 films is studied as a function of different fabricating conditions (implantation dose, annealing temperature and time). The SiO2 films containing Ge nanocrystals exhibit two photoluminescence (PL) bands peaked at 600 nm and 780 nm. The
Publikováno v:
Applied Physics Letters. 74:827-829
We have studied the origin of strong visible photoluminescence (PL) in a Ge/porous Si (PS) structure in terms of infrared spectroscopy and electron spin resonance (ESR). Spectral analyses indicate that the enhanced PL cannot arise from both the quant
Publikováno v:
Applied Physics Letters. 73:1790-1792
Under violet excitation, a strong blue band and a broad red band are emitted simultaneously from the Ge nanocrystal embedded SiO2 films fabricated by Ge+ implantation and annealing. The blue band exhibits a complex annealing behavior, and the photolu