Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Xi Mao"'
Publikováno v:
Computational and Theoretical Chemistry. 964:199-206
Substitution of all 10 3 d transition metal (TM) atoms in a [8, 0] zigzag single walled boron nitride nanotube (BNNT) has been investigated with density functional theory based methods. The TM atoms protrude to the exterior of the wall and may facili
Autor:
Xinglong Wu, Duan Feng, X.Y. Yuan, Xiaoqian Zhang, S. S. Jiang, S. Tong, Xiang-na Liu, Xi-Mao Bao
Publikováno v:
Solid State Communications. 104:355-359
Raman spectra of hydrogenated nanocrystalline silicon films clearly exhibit two size- and crystalline-fraction-dependent spectral regions related to the structural properties of nanocrystals. One is the crystalline band from crystallite core consisti
Publikováno v:
Journal of Applied Physics. 81:3175-3180
By analyzing various experimental photoluminescence (PL) and photoluminescence excitation (PLE) spectra in porous silicon (PS), we have found that the PL spectra in PS are characterized by the transitions among the quantum confined states in nanoscal
Publikováno v:
Physics Letters A. 225:170-174
Raman spectra of C 60 molecules embedded in porous silicon (PS) through both physical deposition and chemical coupling were examined in the wavenumber ranges 400–550 and 1400–1500 cm −1 . Some new vibrational modes relevant to C 60 molecular en
Publikováno v:
Physics Letters A. 221:261-264
Raman and photoluminescence (PL) spectra of porous silicon (PS) were examined as functions of laser irradiation time and laser intensities. The temporal evolution shows three stages, which depend on the laser intensity as follows: (a) For relatively
Publikováno v:
Applied Physics Letters. 73:1568-1570
Low-frequency Raman spectra of the porous structure formed on C+-implanted silicon were examined using the 514.5 and 488 nm lines of Ar+ laser. The sharp low-frequency Raman peaks were observed with narrow linewidth and large intensity. According to
Publikováno v:
Applied Physics Letters. 70:2401-2403
Phonon properties and microstructure of annealed Nd-doped LiTaO3 (LT:Nd) were examined by means of Raman scattering and infrared spectra. Raman spectra show the splitting of A1(TO) mode at 204 cm−1 and the appearance of an additional shoulder peak
Publikováno v:
Solid State Communications. 87:1005-1007
Light emissions of porous silicon were studied by photoluminescence (PL) and photoluminescence excitation spectroscopies (PLE). The results suggest the existence of midgap localized states and provide strong evidence of lattice relaxation effect. Vis
Publikováno v:
Physical review letters. 76(4)
Autor:
Gan Chang-Ming, Huang Xu-Guang, Bao Xi-Mao, Zhou Shi-Ying, Cai Zhi-Gang, Yan Feng, Zhang Xiao-Rong
Publikováno v:
Acta Physica Sinica. 42:1874
Luminescence spectra, picosecond decay and Fourier transform infrared spectroscopy measurements show that there are two independent emission mechanisms in the spontaneously oxidized porous Si. One is determined by the quantum confinement effect , the