Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Peter Beno"'
Publikováno v:
Microelectronics Reliability. 52:1031-1038
An analysis of electrostatic discharge (ESD) protection structures supported by advanced 2-D mixed mode electro-thermal device and circuit simulation with calibrated electro-physical models to increase the reliability of protected IC’s is presented
Publikováno v:
2006 International Conference on Advanced Semiconductor Devices and Microsystems.
The influence of geometrical dimensions on the properties of power DMOSFET's has been studied by 3-D numerical modeling and simulation. The results of 3-D simulation provide a very effective way for the identification of failure mechanism and locatio