Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Kazimieras Badokas"'
Publikováno v:
Journal of Alloys and Compounds. 725:739-743
The GaN was grown on Si(100) with Er 2 O 3 (110) buffer by metal organic chemical vapor deposition (MOCVD). The results showed the polycrystalline nature of the layers with dominant non-polar (11–20) and semi-polar (10–13) orientations. GaN was f
Autor:
Tadas Malinauskas, Yu.N. Makarov, Arūnas Kadys, Ilja Ignatjev, Gintautas Tamulaitis, Sergey P. Lebedev, Alexander A. Lebedev, D. Dobrovolskas, Alexander Usikov, Kazimieras Badokas
Publikováno v:
Journal of Luminescence. 232:117878
Indium nitride epilayers were grown by metalorganic chemical vapour deposition (MOCVD) on graphene/SiC substrates with different terrace widths. Photoluminescence (PL) properties in the epilayers of different thickness and along the epilayer growth d
Autor:
Arūnas Kadys, Sandra Stanionytė, Tadas Malinauskas, Ilja Ignatjev, Edvinas Radiunas, Jūras Mickevičius, Kazimieras Badokas, Giedrius Juška, Martynas Skapas
Publikováno v:
Journal of Physics D: Applied Physics. 54:205103
Remote epitaxy via graphene has recently attracted significant attention, since it provides the possibility to lift-off the grown epitaxial layer, reuse the substrate, and produce flexible devices. However, extensive research is still necessary to fu
Autor:
Kazimieras Badokas, Gintautas Tamulaitis, Tadas Malinauskas, Sandra Stanionytė, D. Dobrovolskas, J. Mickevičius, Arūnas Kadys, J. Jurkevičius
Publikováno v:
physica status solidi (b). 252:1138-1141
BGaN epilayers were grown on GaN/sapphire templates in hydrogen atmosphere by metal organic chemical vapor deposition (MOCVD). The growth was attempted at different temperatures and flow rates of triethylboron, which was used as boron precursor. Acco
Facet analysis of truncated pyramid semi-polar GaN grown on Si(100) with rare-earth oxide interlayer
Autor:
Tadas Malinauskas, Andrew Clark, Rytis Dargis, Kazimieras Badokas, Martin Frentrup, Agnė Kalpakovaitė Jucevičienė, T. Grinys, Sandra Stanionytė
Publikováno v:
Journal of Applied Physics. 120:105301
After epitaxial growth of GaN on Si(100) substrates using an Er2O3 interlayer, two dominant growth orientations can be observed: semi-polar (101¯3) as well as non-polar (112¯0). Epilayers with the (101¯3) orientation lead to the formation of trunc