Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Zhu, Ziyue"'
Publikováno v:
Results in Materials, Vol 12, Iss, Pp 100230-(2021)
In order to optimize the interface performance of copper/steel bimetallic composite and avoid the degradation of the composite performance owing to the difference of thermal-physical properties, HS211/ER50-6 composite structure was fabricated by arc
Publikováno v:
2017 12th IEEE Conference on Industrial Electronics and Applications (ICIEA).
Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have started gaining significant importance in various application areas of power electronics. During the last decade, SiC MOSFETs count not only as potential, but mor
Publikováno v:
2016 IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia).
With the outstanding advantages of SiC MOSFET, which has lower junction capacitance, low-on-state resistor and high junction operating temperature compared to a Si devices, the converter can achieve a high-frequency and high-efficiency. This increase
Publikováno v:
2016 IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia).
Compared to Si IGBT, SiC MOSFET are characterized by faster switching speed and higher operating junction temperature. Potential advantages including significantly lower switching loss, lower dead time and higher switching frequency are achieved by S