Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Yi, Xiaoyan"'
Publikováno v:
Chinese Journal of Luminescence. 41:899-912
Autor:
Liu Zhiqiang, Zhou Chun-Zhi, Li Lin-Xiang, Zhu Hong-Ying, Wang Zun-Gang, Li Jinmin, Huang Guang-Wei, Yi Xiaoyan, Zhang Yiyun, Chen Ye, Zhang Si-Yuan, Wu Kun
Publikováno v:
Acta Physica Sinica. 70:202901
Single-crystal diamond (SCD) detectors promise to have applications in neutron spectrometers and fusion neutron monitoring under high flux deuterium plasma. The response to 14 MeV neutrons for the SCD detector is studied in this paper. A high-perform
Autor:
Ren, Fang, Yin, Yue, Wang, Yunyu, Liu, Zhiqiang, Meng, LIang, Ou, Haiyan, Ao, Jinping, Wei, Tongbo, Yan, Jiancheng, Yuan, Guodong, Yi, Xiaoyan, Wang, Junxi, Li, Jinmin, Dheeraj, Dasa, Weman, Helge
Publikováno v:
2372-?
Materials, Vol 11, Iss 12, p 2372 (2018)
Ren, F, Yin, Y, Wang, Y, Liu, Z, Liang, M, Ou, H, Ao, J, Wei, T, Yan, J, Yuan, G, Yi, X, Wang, J & Li, J 2018, ' Direct Growth Of AlGaN nanorod LEDs on graphene-covered Si ', Materials, vol. 11, no. 12, 2372 . https://doi.org/10.3390/ma11122372
Materials
Volume 11
Issue 12
Materials, Vol 11, Iss 12, p 2372 (2018)
Ren, F, Yin, Y, Wang, Y, Liu, Z, Liang, M, Ou, H, Ao, J, Wei, T, Yan, J, Yuan, G, Yi, X, Wang, J & Li, J 2018, ' Direct Growth Of AlGaN nanorod LEDs on graphene-covered Si ', Materials, vol. 11, no. 12, 2372 . https://doi.org/10.3390/ma11122372
Materials
Volume 11
Issue 12
High density of defects and stress owing to the lattice and thermal mismatch between nitride materials and heterogeneous substrates have always been important problems and limit the development of nitride materials. In this paper, AlGaN light-emittin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93779ad8761fea5818d519130a8ac574
http://hdl.handle.net/11250/2595098
http://hdl.handle.net/11250/2595098
Publikováno v:
2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).
This paper includes discussions concerning the thermal structure and heat dissipation way of high power density LED light source in order to solve the problems such as short life and low reliability which are coursed by the high heat resistance. The
Autor:
Lu Pengzhi, Wang Junxi, Xue Bin, Li Jing, Yi Xiaoyan, Xie Haizhong, Li Jinmin, Yang Hua, Wang Guohong
Publikováno v:
SPIE Proceedings.
In this paper, an array of blue LEDs with high optical power was presented and discussed. Optical of the novel design was completed with the help of running simulation in TracePro to predict the performance of the module. 36 Cree XP-E blue LEDs with
Autor:
Liu Lili, Xie Haizhong, Kong Qingfeng, Pei Yanrong, Lu Pengzhi, Yu Fei, Li Jing, Yi Xiaoyan, Wang Xiaotong, Li Jinmin, Xue Bin, Yang Hua, Wang Junxi
Publikováno v:
SPIE Proceedings.
Thanks to the development in epitaxial growth, chip fabrication and packaging of LEDs, emission spectral of the device is capable of covering the visible spectrum. Therefore, Light-emitting diode (LED) is currently undergoing a growing interest in ma
Light Extraction Efficiency Improvement by Curved GaN Sidewalls in InGaN-Based Light-Emitting Diodes
Publikováno v:
IEEE Photonics Technology Letters. 24:243-245
Polygonal GaN sidewalls are fabricated using a laser scriber and a wet-etching process. After a two-step laser scribing process and a hot acid etching treatment, curved GaN sidewalls are formed consisting of the chemically stable (10-1-2) crystallogr
Publikováno v:
Journal of Semiconductors. 37:061001
Due to their low power consumption, long lifetime and high efficiency, nitrides based white light-emitting-diodes (LEDs) have long been considered to be a promising technology for next generation illumination. In this work, we provide a brief review
Autor:
Jingmei Fan, Libin Wang, Zhiqiang Liu, Fuhua Yang, Jinmin Li, Yiping Zeng, Liangchen Wang, Hua Yang, Yu Chen, Guohong Wang, Yi Xiaoyan
Publikováno v:
SPIE Proceedings.
We investigate the relation between the thickness of sapphire substrates and the extraction efficiency of LED. The increasing about 5% was observed in the simulations and experiments when the sapphire thickness changed from 100um to 200um. But the ou
Publikováno v:
SPIE Proceedings.
The structure of micro-LEDs was optimized designed. Optical, electrical and thermal characteristics of micro-LEDs were improved. The optimized design make micro-LEDs suitable for high-power device. The light extraction efficiency of micro-LEDs was an