Zobrazeno 101 - 110
of 558
pro vyhledávání: '"Tadahiro Ohmi"'
Autor:
Akinobu Teramoto, Shigetoshi Sugawa, Kazufumi Watanabe, Hideaki Ishino, Masaki Hirayama, Koutarou Tanaka, Tadahiro Ohmi
Publikováno v:
Japanese Journal of Applied Physics. 42:2106-2109
It is demonstrated that the formation of the atomic scale flattened Si/SiO2 interface is effective in reducing the Flicker noise in n-channel metal oxide semiconductor field effect transistors (n-MOSFETs). The atomic scale flattened Si/SiO2 interface
Autor:
Masaki Hirayama, Shigetoshi Sugawa, Hiroaki Tanaka, Tadahiro Ohmi, Yukio Hayakawa, Akinobu Teramoto, Zhong Chuanjie
Publikováno v:
Japanese Journal of Applied Physics. 42:1911-1915
In this study, we present the results on silicon oxide films deposited using a Kr/O2/SiH4 high-density and low-ion-energy plasma at low temperature (400°C). The results demonstrate that the post-treatment using the Kr/O2 plasma can eliminate bulk tr
Publikováno v:
SID Symposium Digest of Technical Papers. 43:1251-1253
We have investigated the annealing behavior of a-IGZO4 and found out that crystallization takes place at relatively low temperature of around 400°C when deposited by pure argon and then annealed in argon ambient. When deposited in 4%O2/Ar, on the ot
Autor:
Yoshiya Egashira, Kouji Kosaka, Tetsuya Iwabuchi, Tetsuya Kosaka, Tetsuro Baba, Taishi Endo, Hiroyuki Hashiguchi, Takashi Harada, Keiichi Nagamoto, Masayuki Watanabe, Takahiro Yamakawa, Noboru Miyata, Shiro Moriyama, Yasuhiro Morizono, Akira Nakada, Hiroshi Kubota, Tadahiro Ohmi
Publikováno v:
Japanese Journal of Applied Physics. 41:5858-5863
Our NRUSM (non-resonant type ultrasonic motor) driven 300 mm stroke precision stage for LSI manufacturing devices has achieved 0.69 nm control resolution and positioning performances. The results reveal the quick-response high-tracking ability of the
Publikováno v:
Japanese Journal of Applied Physics. 41:2374-2379
Photoresist developer reclamation technology and systems have been investigated and characteristics of the reclaimed developer were evaluated. High-purity tetramethylammonium hydroxide (TMAH) aqueous solution adjusted to an appropriate concentration
Publikováno v:
Thin Solid Films. 405:290-299
Experimental results regarding the electrical characteristics of thin SiO2 films for use as gate insulators in metal-oxide-semiconductor (MOS) devices, grown by a newly developed catalytic water vapor generator (WVG) are presented. The advantages of
Autor:
Sotaro Toki, Hideo Ikeda, Shoso Shingubara, Tomoyuki Baba, Akihiko Furuya, Hiroshi Kubota, Zenglin Wang, Keiichirou Yasuda, Tadahiro Ohmi, Muneaki Hagiwara
Publikováno v:
Journal of Adhesion Science and Technology. 16:1027-1040
In order to enhance the adhesion strength of copper metal film to a polyimide (PI) film substrate, a method combining surface microroughness formation and imide ring cleavage was investigated. The results showed that imide rings were cleaved with a K
Autor:
Akinobu Teramoto, Tadahiro Ohmi
Publikováno v:
Journal of the Japan Society for Precision Engineering. 68:1144-1149
Demonstrating individual leakage path from random telegraph signal of stress induced leakage current
Autor:
Naoya Akagawa, T. Inatsuka, Toshiki Obara, Tadahiro Ohmi, Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
Time-dependent characteristics of stress induced leakage current (SILC) for the 5.7 and 7.7 nm oxides were evaluated to detect the random telegraph signal (RTS) of gate leakage current. The leakage current from the RTS of IG was extracted. Each curre
Publikováno v:
Journal of Applied Physics. 89:3156-3161
The characteristics of an ion implantation-induced defect in a silicon substrate are investigated. This defect is considered to be a complex of a point defect and a substrate dopant atom. The experiments are conducted by focusing on the dependence of