Zobrazeno 91 - 100
of 558
pro vyhledávání: '"Tadahiro Ohmi"'
Autor:
Akihiro Morimoto, Masafumi Kawasaki, Tadahiro Ohmi, Yasuhiro Wakizaka, Atsushi Kawata, Masahiko Sugimura
Publikováno v:
Journal of Japan Institute of Electronics Packaging. 9:262-268
配線の高精度化, 信号の高速化に伴い, 各種パッケージやプリント配線板の設計精度の向上, 製造精度の向上, 材料の特性改善およびこれらの協調が求められている。特に高周波領域にお
Publikováno v:
Microelectronics Journal. 37:44-49
The high-quality PECVD silicon nitride has been deposited by high-density and low-ion-energy plasma at 400 °C and the effect of the process parameters, such as silane and nitrogen flow rate, pressure, on its structure and electrical properties has b
Autor:
Tetsuya Goto, Y. Kumagai, Shigetoshi Sugawa, Naoya Akagawa, Rihito Kuroda, Tadahiro Ohmi, Akinobu Teramoto, Yutaka Kamata, Tomoyuki Suwa, Xiang Li, K. Sibusawa
Publikováno v:
Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials.
Publikováno v:
Journal of Non-Crystalline Solids. 351:2232-2237
We have studied the electrical properties of the high-quality plasma enhanced chemical vapor deposition (PECVD) silicon oxide deposited by high-density and low-ion-energy plasma at 400 °C and the effect of the plasma post-treatment on its electrical
Autor:
Hidekazu Ishii, Satoru Yamashita, Masafumi Kitano, Naoki Tanahashi, Yasuyuki Shirai, Atsushi Hidaka, Tadahiro Ohmi
Publikováno v:
Solid State Phenomena. :255-258
The production (molding) guideline to realize ultraclean resin components for semiconductor equipment has been established. In this paper, we focused on the degradation behavior of resin materials for the purpose of reducing low-molecular-weight vola
Publikováno v:
IEEE Transactions on Plasma Science. 32:1747-1751
A drastic reduction of the growth temperature of oxynitride (SiON) films, which are usually grown around 1000/spl deg/C, is realized by using a microwave-excited high-density Kr-O/sub 2/-NH/sub 3/ plasma system, which enables their growth at 400/spl
Autor:
Ichirou Takahashi, Tadahiro Ohmi, Tatsufumi Isogai, Shigetoshi Sugawa, Kiyoshi Funaiwa, Akinobu Teramoto, Hiroyuki Sakurai, Masaki Hirayama
Publikováno v:
Integrated Ferroelectrics. 65:29-38
A low dielectric constant ferroelectric Sr2(Ta1 −x,Nbx)2O7 film formation technology which is applied to FFRAM has been developed. The high ferroelectric performance of the STN capacitor has been achieved by plasma physical vapor deposition and mic
Autor:
Yasuhiro Ono, Shigetoshi Sugawa, Masaaki Higuchi, Masaki Hirayama, Tadahiro Ohmi, Ichiro Ohshima, Weitao Cheng, Akinobu Teramoto
Publikováno v:
Applied Surface Science. 216:246-251
Silicon nitride gate dielectric metal-nitride–semiconductor (MNS) having a Si 3 N 4 film grown at 400 °C by microwave-excited high-density plasma has been developed. We demonstrated the electric characteristics of the MNS capacitors with the Si 3
Autor:
Tadahiro Ohmi, Geun Min Choi
Publikováno v:
Solid State Phenomena. 92:23-26
Autor:
Shinichi Urabe, Hiroyuki Sakurai, Tadahiro Ohmi, Shigetoshi Sugawa, Tetsuya Goto, Masaki Hirayama, Akinobu Teramoto, Kentaro Hirai, Ichirou Takahashi, Kiyoshi Funaiwa, Atsuhiko Yamada
Publikováno v:
Japanese Journal of Applied Physics. 42:2050-2054
The compounds of the Sr2Nb2O7 (SNO) family are suitable for use as ferroelectric materials for ferroelectric memory field effect transistors (FETs), because these substances have a low dielectric constant and high heat-resistance. A very low dielectr