Zobrazeno 1 - 10
of 243
pro vyhledávání: '"Hiroshi Nakashima"'
Autor:
Keisuke Yamamoto, Kenta Moto, Kaoru Toko, Toshifumi Imajo, Takashi Suemasu, Hiroshi Nakashima
Publikováno v:
IEEE Electron Device Letters. 42:1735-1738
Thin-film transistor (TFT) applications of GeSn have attracted attention as a means of improving the performance of electronic devices. Based on our advanced solid-phase crystallization and TFT process technologies, we comprehensively studied the rel
Publikováno v:
Electronics and Communications in Japan. 103:15-22
Autor:
Kenji Kawahara, Hiroshi Nakashima, Hiroki Hibino, Yung-Chang Lin, Teerayut Uwanno, Hiroki Ago, Keisuke Yamamoto, Kosuke Nagashio, Yuri Terao, Kazu Suenaga, Pablo Solís-Fernández, Wataru Nishiyama
Publikováno v:
ACS Nano. 14:6834-6844
Controlling the stacking order in bilayer graphene (BLG) allows realizing interesting physical properties. In particular, the possibility of tuning the band gap in Bernal-stacked (AB) BLG (AB-BLG) has a great technological importance for electronic a
Autor:
Md. Mahfuz Alam, Dong Wang, M. Zhang, Kohei Nakae, Kentarou Sawano, Z. Di, Hiroshi Nakashima, K. Yamamoto, Hiroshi Akamine, Z. Xue
Publikováno v:
ECS Transactions. 93:73-77
We electrically characterized Ge-on-Insulator (GOI) fabricated by Smart-Cut™ method. Annealing improved electrical characteristics of the p-GOI. On the other hand, conduction type of the n-GOI changed to p-type after annealing. Structural analysis
Publikováno v:
ECS Transactions. 92:3-10
A border trap (BT) evaluation method was established for SiO2/GeO2/Ge gate stacks by using deep-level transient spectroscopy with a lock-in integrator. Ge metal-oxide-semiconductor capacitors (MOSCAPs) with SiO2/GeO2/Ge gate stacks were fabricated by
Publikováno v:
Nanoscale. 11:13249-13259
Neuronal constructs with tuneable 3D geometry can contribute greatly to the construction of brain-like functional tissues for transplantable grafts and robust experimental models. In this study, we propose a self-folding graphene/polymer bilayer film
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
This research aims to show the benefits of using SiN as a buried-oxide (BOX) in germanium-on-insulator (GOI) substrate. The substrate is fabricated by using a direct bonding method with a smart-cut technology. Using SiN as a BOX layer instead of conv
Publikováno v:
Applied Physics A. 125
The particle size limit for enhanced infrared absorption on metal nanostructures was identified using an infrared spectrometer and microscope accessory for well-defined periodic gold square column (SC) arrays with various nanoparticle sizes on silico
Publikováno v:
3DIC
This research aims to show the advantage of using silicon nitride as a stressor in a strained germanium-on-insulator substrate (strained Ge). A Si substrate is patterned on the surface before bonding for controlling the shape and the position of stra
Publikováno v:
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.