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pro vyhledávání: '"David P. Kennedy"'
Autor:
David P. Kennedy, Philip C. Murley
Publikováno v:
Solid-State Electronics. 15:203-213
Measurements indicate that a thickness variation of approximately 7·0 per cent (2σ) can be expected from modern epitaxial reactors. This epitaxial layer thickness variability, in conjunction with the technique of designing into a transistor collect
Autor:
Philip C. Murley, David P. Kennedy
Publikováno v:
Solid-State Electronics. 3:215-225
For the cylindrical mesa transistor, computation of base-region transport efficiency is considered a boundary-value problem; solution of this problem yields mathematical equations applicable to the design and development of practical semiconductor de
Autor:
David P. Kennedy, Philip C. Murley
Publikováno v:
Journal of Applied Physics. 33:120-125
A one‐dimensional analysis is given on the minority carrier transport characteristics of a transistor base region containing an arbitrary drift field distribution. This field is assumed to enhance—or retard—the motion of minority carriers betwe
Autor:
Redmond R. O'brien, David P. Kennedy
Publikováno v:
Journal of Electronics and Control. 11:303-315
For the double diffused transistor, Poisson's equation is solved in one dimension; this solution is used to determine depletion layer properties of its collector and emitter junctions. Assuming an impurity atom distribution characterized by the summa
Autor:
David P. Kennedy
Publikováno v:
Journal of Applied Physics. 31:1490-1497
For cylindrical semiconductor components, computation of spreading resistance is considered a boundary value problem of the solid circular cylinder. Solutions of this problem may be used, for example, to characterize the thermal spreading resistance
Autor:
David P. Kennedy
Publikováno v:
Journal of Applied Physics. 31:954-956
An analysis is given on the influence of bulk recombination within the base region of a mesa‐type drift transistor. The minority carrier transport efficiency is established for a solid cylinder base region and also for a simplified one‐dimensiona
Autor:
David P. Kennedy
Publikováno v:
Journal of Applied Physics. 31:218-219
Autor:
David P. Kennedy, R.R. O'Brien
Publikováno v:
Solid-State Electronics. 12:829-830