Zobrazeno 1 - 10
of 33
pro vyhledávání: '"C.-Y. Ng"'
Autor:
Jianzhao Liu, Jason C. Y. Ng, Kai Li, Ben Zhong Tang, Guan Wang, Dan Ding, Yong Hu, Bin Liu, Kanyi Pu
Publikováno v:
Small. 8:3523-3530
Herein is reported the synthesis of gadolinium ion (Gd(III))-chelated hyperbranched conjugated polyelectrolyte (HCPE-Gd) and its application in fluorescence and magnetic resonance (MR) dual imaging in live animals. The synthesized HCPE-Gd forms nanos
Publikováno v:
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
A Ka-band high power amplifier MMIC developed from a robust process of 0.2μm gate-length AlGaN/GaN HEMT on SiC is presented. The MMIC chip was measured across 29 to 31GHz under pulsed bias condition. At VDD=28V, The MMIC chip achieved a power added
Publikováno v:
physica status solidi (a). 203:1291-1295
In this work, we have fabricated silicon nanocrystal (nc-Si) based Flash memories with two different tunnel-oxide thicknesses (3 and 7 nm). The nc-Si is synthesized with very-low energy ion implantation and subsequent thermal annealing. The endurance
Publikováno v:
Thin Solid Films. 504:32-35
In this work, we have investigated the capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics of silicon nanocrystals (nc-Si) distributed in the gate oxide very near the SiO2/Si interface of a Metal-Oxide-Semiconductor (MOS)
Autor:
C. Y. Ng, Alastair David Trigg, Ming Yang, A. Du, J. B. Yang, Liang Ding, Chang Ming Li, Tupei Chen
Publikováno v:
IEEE Transactions on Electron Devices. 53:663-667
A nonvolatile memory based on silicon nanocrystals (nc-Si) synthesized with very-low-energy Si+ implantation is fabricated, and the memory performance under the programming/erasing of either Fowler-Nordheim (FN)/FN or channel hot electron (CHE)/FN at
Autor:
Hui Ying Yang, Eunice S.P. Leong, Tupei Chen, H. D. Li, Shu Ping Lau, Agus Putu Abiyasa, Siu Fung Yu, C. Y. Ng
Publikováno v:
Advanced Materials. 18:771-774
Autor:
K. Kuroda, Ken Onodera, Tomohide Soejima, Kazutaka Takagi, Hiroyuki Sakurai, C. Y. Ng, Keiichi Matsushita, Shinichiro Nakanishi, T. Senju
Publikováno v:
2014 9th European Microwave Integrated Circuit Conference.
A Ka-band high power amplifier MMIC developed from 0.18μm gate-length AlGaN/GaN HEMT on SiC is presented. The MMIC chip was measured on-wafer across 29GHz to 31GHz under pulsed bias condition. At VDD=28V, the MMIC achieved an output power of 19W to
Publikováno v:
Smart Materials and Structures. 15:S43-S46
In this work, we have found that the charging of Si nanocrystals (nc-Si) distributed throughout a thin gate oxide can induce a reduction in the total gate oxide capacitance and tunneling current. The capacitance can be reduced to an extremely low val
Publikováno v:
Smart Materials and Structures. 15:S39-S42
In this work, we have examined the dependence of barrier height and effective mass on SiO2 thickness and nitrogen concentration at the SiOxNy/Si interface. From the measurements of the direct tunneling and Fowler–Nordheim (FN) tunneling currents, w
Publikováno v:
International Journal of Nanoscience. :709-715
In this paper, we report a mapping of charge transport in silicon nanocrystals ( nc - Si ) embedded in SiO 2 dielectric films with electrostatic force microscopy (EFM). By using contact EFM mode, positive and negative charges can be deposited on nc -