Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Youguang Zhang"'
Autor:
You Wang, Lang Zeng, Chengzhi Wang, Youguang Zhang, Deming Zhang, Weisheng Zhao, Zhengyi Hou, Kaili Zhang
Publikováno v:
IEEE Transactions on Electron Devices. 67:1965-1971
This article proposes two different magnetic nonvolatile-static random access memory (MNV-SRAM) cell circuits for low-power, high-speed, and high-reliable backup operation with a compact cell area. They employ perpendicular magnetic tunnel junctions
Autor:
Weisheng Zhao, Zhenyi Zheng, Yue Zhang, Zhizhong Zhang, Yuanzhi Zhu, Jiang Nan, Kun Zhang, Youguang Zhang
Publikováno v:
IEEE Electron Device Letters. 40:1984-1987
Compared with skyrmions in ferromagnetic (FM) materials, skyrmions in near-compensated ferrimagnetic (FIM) materials demonstrate higher motion velocity and negligible skyrmion Hall (Sky-Hall) angle. This provides a brighter prospect of skyrmions for
Autor:
Jiaqi Lu, Xiang Li, Weisheng Zhao, Kang L. Wang, Weixiang Li, Hao Wu, Shouzhong Peng, Danrong Xiong, Yan Zhang, Youguang Zhang
Publikováno v:
Physical Review B. 103
Efficient manipulation of magnetization is crucial for magnetic random-access memory (MRAM). Here we experimentally demonstrate spin-orbit-torque-driven (SOT-driven) magnetization switching of perpendicularly magnetized IrMn/CoFeB/MgO structures with
Publikováno v:
IEEE Transactions on Electron Devices. 66:2795-2801
Although spin transfer torque (STT)-based magnetic tunneling junction (MTJ) owns advantages of nonvolatility, nonlimited endurance, and fast write/read, its demand for high current density significantly casts a shadow over its future prospects. Recen
Publikováno v:
IEEE Transactions on Electron Devices. 65:5537-5544
Magnetic tunnel junctions (MTJs) with low switching current, high thermal stability, and small device size are strongly preferred for low-power, high-reliability, and high-density spintronic memory and logic applications. The research of MTJs from sh
Autor:
Junfeng Qiao, Kang L. Wang, Runze Chen, Zilu Wang, Weisheng Zhao, Shouzhong Peng, Xiang Li, Youguang Zhang, Lezhi Wang, Jiaqi Zhou
Publikováno v:
IEEE Transactions on Magnetics. 54:1-5
Magnetic tunnel junctions (MTJs) based on MgO/CoFeB/W structures are of particular interest for magnetic random access memories due to their high tunnel magnetoresistance, low damping, and stable properties at high annealing temperature. One of the m
Advanced Spin Orbit Torque Magnetic Random Access Memory with Field-Free Switching Schemes (Invited)
Publikováno v:
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Magnetic random access memory (MRAM) is considered a promising candidate for future both standalone and embedded memory technology. The emerging spin orbit torque (SOT) mechanism is expected to alternate the traditional spin transfer torque (STT) wri
Autor:
Xiaowan Qin, Weisheng Zhao, Tianqi Gao, Mingzhi Long, Lang Zeng, Youguang Zhang, Deming Zhang
Publikováno v:
IEEE Transactions on Nanotechnology. 17:492-499
Currently, commercial semiconductor-based memories face the problem of static energy consumption caused by leakage currents. Magnetoelectric random access memory (MeRAM), as a type of nonvolatile memory, provides a solution to this problem and can be
Autor:
Weisheng Zhao, Xiaowan Qin, Xiaoyang Lin, Deming Zhang, Yue Zhang, Lang Zeng, Mingzhi Long, Tianqi Gao, Youguang Zhang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 245-249 (2018)
Since Internet of Things devices should ideally be self-powered, there is great demand for devices with ultra-low operating voltages that can run on energy harvested from a noisy environment. In this paper, a novel all spin logic (ASL) device with vo
Autor:
Guodong Wei, Shen Li, Zhaohao Wang, Youguang Zhang, Chen Lv, Xiaoyang Lin, Wei Yang, Yiang Xiong, Weisheng Zhao
Publikováno v:
Applied Physics Letters. 119:122401
Magnetic anisotropy modulation is an effective method to simultaneously reduce the switching current and extend the data retention of magnetic tunnel junction (MTJ), which is promising to be used in the next-generation spin transfer torque (STT) magn