Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Doris Schmitt"'
Autor:
T. Lueftner, R.J. Knight, K. Just, Doris Schmitt-Landsiedel, G. Sauzon, P. Acharya, Christian Pacha, P. Hober, A. Bonnardot, P. Mahrla, O. Hoemke, A. Yakovleff, M. Sauer, Jörg Berthold, S. Buch, Georg Georgakos, Stephan Henzler, A. Klein, J. Beshenar
Publikováno v:
ISSCC
To meet the widely varying speed and power requirements of multifunctional mobile devices, an appropriate combination of technology features, circuit-level low-power techniques, and system architecture is implemented in a GSM/Edge baseband processor
Dynamic State-Retention Flip-Flop for Fine-Grained Power Gating With Small Design and Power Overhead
Autor:
Matthias Eireiner, Doris Schmitt-Landsiedel, Christian Pacha, Georg Georgakos, Thomas Nirschl, Stephan Henzler, Joerg Berthold
Publikováno v:
IEEE Journal of Solid-State Circuits. 41:1654-1661
Fine-grained power gating is the rigorous application of sleep transistor scheme to reduce stand-by power consumption in idle circuit blocks. Small circuit blocks are suspended for a short time while they are temporarily not needed. A sense-amplifier
Autor:
Doris Schmitt-Landsiedel, M. Oswald, M. Weis, Peng-Fei Wang, Ch. Stepper, K. Hilsenbeck, Th. Nirschl, Walter Hansch
Publikováno v:
Solid-State Electronics. 48:2281-2286
The metal oxide semiconductor field effect transistor (MOSFET) is scaling to a “tunneling epoch”, in which multiple leakage current induced by different tunneling effects exist. The complementary Si-based tunneling transistors are presented in th
Publikováno v:
IEEE Journal of Solid-State Circuits. 38:1261-1265
A successive approximation analog-to-digital converter (ADC) is presented operating at ultralow supply voltages. The circuit is realized in a 0.18-/spl mu/m standard CMOS technology. Neither low-V/sub T/ devices nor voltage boosting techniques are us
Publikováno v:
IEEE Journal of Solid-State Circuits. 37:1662-1669
A 0.7-V MOSFET-only /spl Sigma//spl Delta/ modulator for voice band applications is presented. The second-order modulator is realized using a switched-opamp technique. All capacitors are realized using compensated MOS devices operated in the depletio
Publikováno v:
IEEE Journal of Solid-State Circuits. 36:1041-1047
A low-voltage high-linearity MOSFET-only /spl Sigma//spl Delta/ modulator for speech band applications is presented. The modulator uses substrate biased MOSFETs in the depletion region as capacitors, linearized by a series compensation technique. A s
Publikováno v:
IEEE Journal of Solid-State Circuits. 36:1745-1755
Current sensing in SRAMs is very promising to achieve high-speed operation in low-voltage applications. However, so far, a main limitation of the practical use of current sense amplifiers is the finite resistance of the bitline multiplexer (MUX). In
Publikováno v:
PATMOS
Recent technological advances in semiconductor industry have led to extreme scaling of CMOS devices. In such advanced technologies fulfilling application specific reliability requirements is not an easy task. This is a crucial issue particularly in c
Autor:
K. Herfurth, T. Roehr, E. Paparisto, M. Strasser, Thomas Kern, S. Kassenetter, R. Bartenschlager, Doris Schmitt-Landsiedel, L. Castro, Christoph Roll, R. Renardy, B. Rousseau, J. Elbs, W. Trottmann, N. Lawal, S. Thierold, Mihail Jefremow, U. Backhausen
Publikováno v:
ESSCIRC
This paper presents a 65nm embedded flash macro for automotive applications with read and write throughput of 5.7GB/s and 1.4MB/s respectively. The high read throughput rate is achieved by using the multi voltage domain multiplexer design enabling a
Publikováno v:
2010 Proceedings of the European Solid State Device Research Conference.
This paper presents stability analysis of large-scale SRAM arrays directly after terminating NBTI stress. While the impact of static NBTI is well examined for cells and arrays, the fast-recovering component was not yet measured on SRAM arrays. The no