Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Yiming Qu"'
Publikováno v:
IEEE Transactions on Electron Devices. 65:2729-2735
In this paper, fast trap behaviors in Ge pMOSFETs with Al2O3/GeO x /Ge gate-stack are evaluated and quantitatively characterized using a novel sub-1-ns ultrafast measurement (UFM) system. By changing the operation temperature and the rising time of t
Publikováno v:
IEEE Electron Device Letters. 39:172-175
In this letter, a novel fast threshold voltage ( ${V}_{th}$ ) measurement (FVM) technique is proposed and demonstrated, which could perform ${I}$ – ${V}$ characterization of MOSFETs within 1 ns. With the advanced FVM technique, down to 1-ns negativ
Publikováno v:
IEEE Transactions on Electron Devices. 64:909-915
In this paper, we investigate the carrier transport characteristics of the ultrascaled Si FinFETs. Traditional dc characterization technique is compared with the ultrafast pulsed IV method. Due to the severe self-heating effect introduced in the char
Publikováno v:
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
Continuous scaling of the transistor improves its performance and, however, also introduces some new problems, especially the increasingly severer self-heating effect (SHE). In this paper, the transient SHE behaviors in transistors of the advanced te
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
Ge p- and n-MOSFETs with Al 2 O 3 /GeO x /Ge gate stack were fabricated and characterized using a novel sub-1 ns ultra-fast measurement system. Devices operation under the conditions, that applying Vg with the ultra-fast rise edge down to less than 1