Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Soo-young Oh"'
Autor:
Cheong-Rae Roh, Suk-Joo Choi, Yoo-Min Kim, Jong-Hwa Kim, Soo-young Oh, Soo Hyun Kim, Hye Yeon Yi, Soo Young Jeong
Publikováno v:
Obstetrics & Gynecology Science
Obstetrics & Gynecology Science, Vol 61, Iss 2, Pp 209-219 (2018)
Obstetrics & Gynecology Science, Vol 61, Iss 2, Pp 209-219 (2018)
Objective Reviewing indications and characteristics of obstetric patients admitted to the intensive care unit (ICU) of a tertiary care center, comparing those patients by time period and place of delivery, and to verify clinical utility of acute phys
Autor:
Yoo-Min Kim, Suk-Joo Choi, Soo-young Oh, Jae-Yoon Shim, Ji Y. Kim, Cheong-Rae Roh, Mi-Young Lee
Publikováno v:
The journal of obstetrics and gynaecology research. 45(6)
Aim This study aimed to evaluate the association of bidet toilet use with abnormal vaginal microbial colonization and preterm birth (PTB) in high-risk pregnancies. Methods This is a prospective cohort study of 208 women, who were admitted to a high-r
Publikováno v:
Current Photovoltaic Research. 4:80-86
Publikováno v:
IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing. 39:779-789
The authors describe a parameterized interconnect model library generator that provides VLSI designers with a direct link between numerical method-based capacitance simulators and SPICE-like circuit simulators. As a result, interconnect parasitics ar
Publikováno v:
ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361).
As scaling has continued for more than 20 years, it has yielded faster and denser chips with ever increasing functionality. The scaling will continue down to or beyond 0.1 /spl mu/m as proposed in the SIA Technical Road map. With scaling, device perf
Publikováno v:
Electrical Performance of Electronic Packaging.
A 3D Global Interconnect Parameter ExtractoR (GIPER) has been developed to provide a practical extraction tool for the full-chip global critical path analysis. It extracts the interconnect parameters (R,C) of a typical global interconnect within seve
Autor:
Clifford I. Drowley, K. Brigham, H.-S. Fu, J. E. Turner, A.K. Kapoor, S. J. Rosner, Soo-Young Oh, Wen-ling Margaret Huang, D. Pettengill, M.P. Scott, G. Burton, P. Vande Voorde, A. Wang, C.-H. Lin, Shang-Yi Chiang
Publikováno v:
IEEE Electron Device Letters. 11:412-414
An experimental bipolar transistor structure with self-aligned base-emitter contacts formed using one polysilicon layer is presented with geometries and frequency performance comparable to those of double-polysilicon structures. This structure, calle
Autor:
P.J. Vande Voorde, H.-S. Fu, G. Burton, K. Brigham, D. Pettengill, S. J. Rosner, Clifford I. Drowley, Wen-ling Margaret Huang, J. E. Turner, Soo-Young Oh, A.K. Kapoor, A. Wang, C.-H. Lin, Shang-Yi Chiang, M.P. Scott
Publikováno v:
Digest of Technical Papers.1990 Symposium on VLSI Technology.
Experimental results are presented for a high-performance silicon bipolar transistor structure utilizing a single layer of polysilicon for both the base and emitter contacts. This structure, called STRIPE (self-aligned trench-isolated polysilicon ele
Publikováno v:
IEEE Journal of Solid-State Circuits. 15:636-643
Two methods have been developed for analyzing MOS transients. One method is analytical and uses the quasi-static approximation. It is useful when the stray capacitance dominates MOS transient performance. The second method is numerical and uses a new
Publikováno v:
IEEE Electron Device Letters. 4:236-239
As the gate insulator thickness approaches the channel thickness, the gate capacitance is speculated to be smaller than its gate insulator capacitance. The gate capacitance of the thin-gate IGFET is calculated using Maxwell-Boltzmann and Fermi-Dirac