Zobrazeno 1 - 10
of 236
pro vyhledávání: '"Song Yang"'
Publikováno v:
IEEE Transactions on Mobile Computing. 21:2833-2846
Speeding is one of the biggest threatens to road safety. However, facilities like radar detector and speed camera are not deployed everywhere, as roads in some areas like campus and residential areas often lack these facilities. Several solutions eit
Publikováno v:
Journal of Materials Science & Technology. 102:115-122
Barium ferrite (BaFe12O19) is considered as potential microwave absorption (MA) material thanks to the large saturation magnetization, high Curie temperature, and excellent chemical stability. The integration of carbon nanotube (CNT) can improve the
Publikováno v:
Petroleum Science. 19:279-295
To visually describe the sanding pattern, this study constructs a new particle-scale microstructure model of weakly consolidated formation, and develop the corresponding methodology to simulate the sanding process and predict sand cavity shape. The m
Publikováno v:
Structures. 34:5013-5028
In light of the weak bond strength between the two materials in steel reinforced concrete (SRC) and the brittleness of high-strength concrete, the use of high-performance fiber-reinforced concrete (HPFRC) was proposed with the addition of cellulose f
Publikováno v:
IEEE Transactions on Applied Superconductivity. 31:1-4
Heat generation and serious energy consumption of normal-conductive suspension electromagnets influence the performance and stability of suspension systems. With the development of second generation (2G) high temperature superconducting (HTS) technol
Autor:
Kevin J. Chen, Jiahui Sun, Sirui Feng, Han Xu, Song Yang, Zheyang Zheng, Jin Wei, Wenjie Song, Tao Chen, Li Zhang, Yat Hon Ng
Publikováno v:
IEEE Electron Device Letters. 42:1584-1587
GaN ${p}$ -channel field-effect transistors ( ${p}$ -FETs) are essential components for implementing the energy-efficient complementary logic circuitry for monolithic GaN power integration. This letter reports the threshold voltage ( ${V}_{\mathrm {T
A Physics-Based Empirical Model of Dynamic I OFF Under Switching Operation in p-GaN Gate Power HEMTs
Autor:
Jin Wei, Kailun Zhong, Kevin J. Chen, Song Yang, Zheyang Zheng, Mengyuan Hua, Yuru Wang, Tao Chen, Wenjie Song
Publikováno v:
IEEE Transactions on Power Electronics. 36:9796-9805
In this article, an empirical model of dynamic off -state leakage current ( I OFF) under switching operation in p -GaN gate high-electron-mobility transistors is established based on its underlying physical mechanism. The impacts of relevant switchin
Autor:
Han Xu, Wenjie Song, Jin Wei, Li Zhang, Jiahui Sun, Song Yang, Zheyang Zheng, Tao Chen, Kevin J. Chen, Sirui Feng
Publikováno v:
Nature Electronics. 4:595-603
Owing to its energy efficiency, silicon complementary metal–oxide–semiconductor (CMOS) technology is the current driving force of the integrated circuit industry. Silicon’s narrow bandgap has led to the advancement of wide-bandgap semiconductor
Autor:
Kevin J. Chen, Chengcai Wang, Jin Wei, Junting Chen, Song Yang, Zheyang Zheng, Li Zhang, Junlei Zhao, Mengyuan Hua
Publikováno v:
IEEE Electron Device Letters. 42:669-672
In this work, we study the gate leakage mechanisms of E-mode ${p}$ - ${n}$ junction/AlGaN/GaN (PNJ) high electron mobility transistors (HEMTs), which have been shown to deliver low gate leakage and wide safe operating gate-bias range. The intrinsic g
Publikováno v:
ACS Applied Materials & Interfaces. 13:19008-19015
Alkaline zinc-based batteries are becoming promising candidates for green and economical energy-storage systems, thanks to their low cost and high energy density. The exploitation of the stable cathode materials with high rate capability and cycling