Zobrazeno 1 - 10
of 24
pro vyhledávání: '"ZHAO LI"'
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:23923-23934
SWCNT-based thin-film transistors (TFTs) typically display unipolar p-type electrical characteristics in ambient condition due to the O₂/H₂O redox couple. However, complementary circuits that combine both p and n channels are preferred due to low
Publikováno v:
Journal of Materials Chemistry C. 9:13432-13438
Chromium (Cr), located in the subgroup VIB of the periodic table of elements, is widely known as the hardest metal in nature with a high polish and high melting point with an atomic number 24. In the past years, researches on the optical nonlinear be
Publikováno v:
IEEE Electron Device Letters. 41:1364-1367
The effects of NH3-plasma treating HfO2 gate dielectric on electrical characteristics of top-gate (TG) MoS2 FETs are investigated. The experimental results show that the increase of off-state current after growing HfO2 top-gate dielectric can be cons
Publikováno v:
Journal of Lightwave Technology. 36:5678-5684
Ultrathin and tunable pressure sensors are highly desirable for research and engineering applications. This study designed a surface plasmon resonance (SPR) architecture based on a phase modulation method using antimonene/graphene/π-SnSe heterostruc
Publikováno v:
2020 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO).
Terahertz (THz) detectors have shown attractive prospects in the areas of THz sensing and imaging. This paper presents the multi-physics modeling of an on-chip octagonal ring antenna loaded with a polysilicon resistor coupled with a sensitive proport
Publikováno v:
Quantum and Nonlinear Optics VII.
The on-chip scale devices are an appealing technology for diverse application, such as all-optical signal processing, frequency metrology, spectroscopy and sensing as the advantages of low cost, compact size and reduced power consumption. By capitali
Mid-infrared Absorption of Femtosecond Laser Microstructured Silicon Formed in Different Gas Ambient
Publikováno v:
Conference on Lasers and Electro-Optics.
We researched the mid-infrared absorption changes of micro-structured silicon prepared in SF6, N2, and NF3, the different changes mainly due to the concentrations of impurities doped in surface layer.
Autor:
Liu Zhe, H. S. Chen, Huanxiang Jiang, Fang-Yuan Fan, W. Y. Han, Zhao Li, Guoqing Miao, Yinbo Chen, Zhipeng Zhang, Hongwei Song
Publikováno v:
Journal of Materials Science: Materials in Electronics. 29:9077-9082
A back-illuminated metal–insulator–semiconductor (MIS) structure AlGaN-based solar-blind ultraviolet photodiode is demonstrated for the purpose of overcoming the technical bottleneck caused by high Al content p-AlGaN in p–i–n structure. The d
Autor:
Shan Zou, Girjesh Dubey, Naiying Du, Patrick R. L. Malenfant, Zhao Li, Gregory P. Lopinski, Jacques Lefebvre
Publikováno v:
Organic Electronics. 42:329-336
Cyanoethylated pullulan (CEP), a high-k solution processable polymer gate dielectric, is used to fabricate bottom gated single wall carbon nanotube (SWCNT) network thin film transistors (TFTs). Both aqueous and organic dispersions of highly semicondu
Autor:
赵丽霞 Zhao Li-xia, 吴春晖 Wu Chun-hui, 刘磊 Liu Lei, 陈宏达 Chen Hong-da, 王军喜 Wang Jun-xi, 付丙磊 Fu Bing-lei, 朱石超 Zhu Shi-chao
Publikováno v:
Chinese Journal of Luminescence. 38:347-352