Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Haroon Ahmed"'
Autor:
David A. Williams, William I. Milne, L. A. W. Robinson, Seung-Beck Lee, Kbk Teo, Gehan A. J. Amaratunga, David G. Hasko, Manishkumar Chhowalla, Haroon Ahmed
Publikováno v:
Microelectronic Engineering. :615-622
We report on a study into electrode fabrication for the gate control of carbon nanotubes partially suspended above an oxidised silicon substrate. A fabrication technique has been developed that allows self-aligned side-gate electrodes to be placed wi
Autor:
Manishkumar Chhowalla, Kbk Teo, Gehan A. J. Amaratunga, V. Semet, A. Loiseau, William I. Milne, Shinbuhm Lee, Pierre Legagneux, Haroon Ahmed, G. Pirio, David G. Hasko, M. Castignolles, O. Groening, Didier Pribat, Vu Thien Binh
Publikováno v:
Nanotechnology. 14:204-211
The ability to grow carbon nanotubes/nanofibres (CNs) with a high degree of uniformity is desirable in many applications. In this paper, the structural uniformity of CNs produced by plasma enhanced chemical vapour deposition is evaluated for field em
Publikováno v:
Microelectronic Engineering. :981-987
We describe the fabrication and operation of a NOR logic gate based on a single, dual-heater superconducting nanotransistor. The nanotransistor is a weak-link device that uses integrated heaters to control its critical current. The fabrication proces
Autor:
Hiroshi Mizuta, G. Evans, Kazuo Nakazato, Haroon Ahmed, Shuhei Amakawa, Andrew C. Irvine, Zahid A. K. Durrani, Kazuhito Tsukagoshi, Heinz Olaf Müller, David A. Williams
Publikováno v:
Nanotechnology. 12:155-159
This paper gives a brief review of our recent work done in the area of nanometre-scale Coulomb blockade (CB) memory and logic devices, that enable us to realize future electron-number scalability by overcoming inherent problems to conventional semico
Publikováno v:
Microelectronic Engineering. 53:179-182
An encapsulated vacuum nanotriode with horizontal and vertical dimensions of 100 nm has been fabricated and characterized. Electrons are field-emitted from tungsten nanopillars fabricated on the cathode having tip radii of 1 nm and heights of up to 1
Autor:
N. J. Stone, Haroon Ahmed
Publikováno v:
Microelectronic Engineering. :511-514
A silicon single-electron memory showing clear hysteresis at 4.2K is demonstrated. The memory structure consists of three integrated silicon nanowires. The capability of the memory to read, write and erase electrons from the storage node is shown. Th
Publikováno v:
Applied Physics Letters. 79:1348-1350
High-density silicon nanopillar cathodes were fabricated using a self-assembling colloidal gold etch mask. Scanning tunneling microscopy experiments were performed to locate individual nanopillars and to investigate their field emission properties. E
Publikováno v:
Microelectronic Engineering. 17:563-566
Mixed lithography combining a 140 keV Be++ focussed ion beam and a 60kV electron beam has been applied to fabricate T-section structures for use as gate electrodes in GaAs MESFETs intended to operate in monolithic microwave integrated circuits. Gate
Autor:
Zahid A. K. Durrani, Haroon Ahmed
Nanosilicon materials are promising systems for the fabrication of single-electron transistor (SET) and memory devices in silicon. In these devices, precise control over the charging of a nanometre-size “island” by just one electron raises the po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b1e34b56c46ca225ab6bb3c2d0c2406
https://doi.org/10.1016/b978-008044528-1.50011-7
https://doi.org/10.1016/b978-008044528-1.50011-7
Autor:
Y. T. Tan, Y. Furuta, Hiroshi Mizuta, Haroon Ahmed, Shuhei Amakawa, Zahid A. K. Durrani, Kazuo Nakazato, Toshio Kamiya
This paper presents a brief overview of the physics of nanosilicon materials for single-electron device applications. We study how a nanosilicon grain and a discrete grain boundary work as a charging island and a tunnel barrier by using a point-conta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7dc2112d14275050725eb22046d7b30e
https://eprints.soton.ac.uk/266203/
https://eprints.soton.ac.uk/266203/