Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Denis V"'
Publikováno v:
Semiconductors. 51:1500-1504
The rectification of terahertz radiation due to plasmonic nonlinearities in a periodic graphene structure with a dual-grating gate and an asymmetric unit cell is considered. The influence of unit-cell asymmetry on the plasmonic rectification of the t
Autor:
G. S. Grebenyuk, Serguei L. Molodtsov, M. V. Gomoyunova, I. I. Pronin, Denis V. Vyalikh, Artem G. Rybkin, O. Yu. Vilkov, D. Yu. Usachov, Boris V. Senkovskiy
Publikováno v:
Applied Surface Science. 392:715-722
A new method for synthesis of graphene-protected iron silicides has been tested, which consists in formation of graphene on Ni(111) followed by two-step intercalation of the system with Fe and Si. Characterization of the samples was performed in situ
Autor:
Kirill L. Gerasimov, Nadezhda N. Dremova, Lyubov A. Frolova, Pavel A. Troshin, Denis V. Anokhin
Publikováno v:
The Journal of Physical Chemistry Letters. 7:4353-4357
Here we report a systematic study of the Pb2+ substitution in the hybrid iodoplumbate MAPbI3 with a series of elements affecting optoelectronic, structural, and morphological properties of the system. It has been shown that even partial replacement o
Publikováno v:
The Journal of Physical Chemistry C. 120:21373-21380
Scanning tunneling microscopy (STM) has been used to obtain the aerial distribution of bridge-bonded hydroxyl groups (HOb) on a rutile TiO2(110) surface, modified with a well-defined nanoscale strain field. Our study makes use of earlier findings tha
Publikováno v:
Applied Mechanics and Materials. 792:623-628
In present work a new setup for in situ studies of molecular self-assembling process for fabrication of ion-conducting membranes for “green” fuel cells was developed. Due to compactness, this unique setup can be used on the synchrotron beamlines.
Autor:
Mustapha Jouiad, Denis V. Vyalikh, Geetanjali Deokar, Philippe Lambin, Florent Ravaux, Clauida Struzzi, Juan Casanova-Chafer, Péter Vancsó, Anna A. Makarova, Jean-François Colomer, Eduard Llobet, Raul Arenal
Publikováno v:
Deokar, G, Vancso, P, Arenal, R, Ravaux, F, Casanova-Cháfer, J, Llobet, E, Makarova, A, Vyalikh, D, Struzzi, C, Lambin, P, Jouiad, M & Colomer, J-F 2017, ' MoS2–carbon nanotube hybrid material growth and gas sensing ', Advanced Materials Interfaces, vol. 4, no. 24, 1700801 . https://doi.org/10.1002/admi.201700801
Advanced Materials Interfaces
Digital.CSIC. Repositorio Institucional del CSIC
instname
Advanced Materials Interfaces
Digital.CSIC. Repositorio Institucional del CSIC
instname
Hexagonal‐shaped nanoplates (HNPs) of MoS2 on vertically aligned carbon nanotubes (CNTs) over a patterned area (a circular area of 1 cm2 diameter) are produced by chemical vapor deposition technique. With an optimized initial Mo film thickness, a u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b70e0c803e826fb5498f713af42416d4
https://pure.unamur.be/ws/files/36969546/AdvMatInt.pdf
https://pure.unamur.be/ws/files/36969546/AdvMatInt.pdf
Autor:
Amit Yadav, Sergey Yu. Karpov, Denis V. Mamedov, Edik U. Rafailov, V. L. Zerova, I. E. Titkov
Publikováno v:
Materials; Volume 10; Issue 11; Pages: 1323
Materials, Vol 10, Iss 11, p 1323 (2017)
Materials
Materials, Vol 10, Iss 11, p 1323 (2017)
Materials
External quantum efficiency of industrial-grade green InGaN light-emitting diodes (LEDs) has been measured in a wide range of operating currents at various temperatures from 13 K to 300 K. Unlike blue LEDs, the efficiency as a function of current is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e60a69610db8943e27ca8469e959e1c3
Autor:
Lada V. Yashina, Evgueni V. Chulkov, Clemens Laubschat, Dmitry Yu. Usachov, Denis V. Vyalikh, Boris V. Senkovskiy, Andrés Arnau, Mikhail M. Otrokov, Oleg Yu. Vilkov, A. V. Fedorov, V. K. Adamchuk, Artem G. Rybkin, A. E. Petukhov, Mani Farjam
Publikováno v:
ACS Nano. 2015. Vol. 9. P. 7314-7322
Digital.CSIC. Repositorio Institucional del CSIC
instname
Digital.CSIC. Repositorio Institucional del CSIC
instname
Embedding foreign atoms or molecules in graphene has become the key approach in its functionalization and is intensively used for tuning its structural and electronic properties. Here, we present an efficient method based on chemical vapor deposition
Autor:
Boris V. Senkovskiy, Alexander Grüneis, V. K. Adamchuk, Alexander Fedorov, Oleg Yu. Vilkov, Nikolay I. Verbitskiy, Lada V. Yashina, Clemens Laubschat, Andrey A. Volykhov, Dmitry Yu. Usachov, Denis V. Vyalikh, Mani Farjam
Publikováno v:
Nano Letters. 14:4982-4988
Many propositions have been already put forth for the practical use of N-graphene in various devices, such as batteries, sensors, ultracapacitors, and next generation electronics. However, the chemistry of nitrogen imperfections in this material stil
Autor:
V. K. Adamchuk, Boris V. Andryushechkin, Alexander Fedorov, Denis V. Vyalikh, Boris V. Senkovskiy, D. Yu. Usachov, O. Yu. Vilkov
Publikováno v:
Physics of the Solid State. 55:1325-1332
The crystalline and electronic structure of nitrogen-doped graphene (N-graphene) has been studied by photoelectron spectroscopy and scanning tunneling microscopy. Synthesis of N-graphene from triazine molecules on Ni(111) surface results in incorpora