Zobrazeno 1 - 10
of 26
pro vyhledávání: '"F. Rinaldi"'
Publikováno v:
Journal of Crystal Growth. 323:438-441
We present the epitaxial growth and processing as well as measurement results of vertical-cavity surface-emitting lasers (VCSELs) monolithically integrated with photodiodes for high-speed bidirectional data transmission over multimode fibers. For thi
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 15:973-977
In this paper, we present a carefully elaborated layer design for semiconductor disk lasers. Experimental results of devices mounted on simple copper heat spreaders reveal a conversion efficiency of 54% at 13.2 W for 970-nm wavelength laser emission
Autor:
J.M. Ostermann, Benjamin Scherer, Matthias Weidemüller, Wenzel Salzmann, Jürgen Wöllenstein, F. Rinaldi, Rainer Michalzik
Publikováno v:
Microsystem Technologies. 14:607-614
Vertical-cavity surface-emitting lasers (VCSELs) are used for oxygen monitoring via tunable diode laser spectroscopy at 760 nm wavelength. For the desired application, novel polarization-stable laser diodes based on AlGaAs were developed. We present
Autor:
Thomas Dipl.-Phys. Kübler, F. Rinaldi, Uwe Brauch, S. Lorch, S.-S. Beyertt, P. Unger, A. Giesen, N. Dhidah, Frank Demaria
Publikováno v:
IEEE Journal of Quantum Electronics. 43:869-875
Means that may optimize the efficiency of semiconductor disk lasers (optically pumped vertical external-cavity surface-emitting lasers) are discussed: the direct pumping of the quantum wells (QWs), the optimization of the interaction of the QWs with
Publikováno v:
Optics Communications. 270:310-313
Vertical-cavity surface-emitting lasers (VCSELs) showing continuous-wave operation with emission wavelengths ranging between 717 and 790 nm have been fabricated. The samples are grown by solid source molecular beam epitaxy on GaAs substrates and are
Publikováno v:
Optics Communications. 270:332-335
We present inverted surface relief vertical-cavity surface-emitting lasers (VCSELs) showing a side-mode suppression ratio above 30 dB up to maximum optical output powers of 6.3 mW and differential quantum efficiencies exceeding 90%. An evaluation of
Autor:
J.M. Ostermann, S. Hartwig, Jürgen Wöllenstein, Rainer Michalzik, Andreas Peter, Armin Lambrecht, F. Rinaldi, Marcus Braun
Publikováno v:
tm - Technisches Messen. 72:440-448
Oberflächenemittierende Halbleiterlaser (VCSEL) werden zur spektroskopischen Sauerstoffmessung im Wellenlängenbereich bei 762 nm eingesetzt. Hierfür wurden besonders polarisationsstabile Laserdioden auf der Basis von AlGaAs entwickelt. Im Vergleic
Autor:
Rudolf Rösch, P. Unger, Alexander Hein, Susanne Menzel, F Rinaldi, Frank Demaria, Alexander Kern
Publikováno v:
IEEE Photonics Technology Letters. 23:179-181
We present a semiconductor disk laser with a fundamental emission at 920 nm which is frequency-doubled utilizing a bismuth triborate nonlinear crystal. The generated blue emission at 460 nm is the most suitable wavelength for display applications. Th
Publikováno v:
IEEE Photonics Technology Letters. 20:2084-2086
We report the monolithic integration of vertical-cavity surface-emitting lasers (VCSELs) with curved dielectric mirrors. The laser structure has an InGaAs/GaAs gain region and incorporates a photoresist pattern fabricated on the substrate side. A die
Publikováno v:
IEEE Photonics Technology Letters. 18:2386-2388
We present the operation characteristics of 850-nm wavelength GaAs-based monolithically integrated transceiver chips designed for low-cost short-distance bidirectional optical data transmission over a butt-coupled 200-mum core diameter polymer-clad s