Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Fuei Pien Chee"'
Publikováno v:
Radiation Physics and Chemistry. 184:109455
In space, semiconductor devices are vulnerable to various effect of high energy radiation, causing single event upsets (SEUs), damaging or altering the lattice structure of the semiconductor device. The effect of ionizing radiation on metal oxide sem
Publikováno v:
Advanced Science Letters. 23:1416-1421
Irradiation impact of gamma rays and X-rays on bipolar junction transistors (BJTs) in terms of electronic excitation due to transfer of energy and subsequent ionization, as well as energy transfer to atomic nuclei is studied using in-situ method. Com
Autor:
Afishah Alias, D S Mivolil, Khairul Anuar, Saafie Salleh, Fuei Pien Chee, Khairul Anuar Mohd Salleh, Rosfayanti Rasmidi, Abi Muttaqin Jalal Bayar, Mivolil Duinong
Publikováno v:
ECS Journal of Solid State Science and Technology. 9:045019
In this research, n-ZnO/p-CuGaO2 based semiconductor devices were fabricated and exposed to gamma rays with increasing total ionizing dose (TID) and neutron fluence at different flux. Based on the I-V properties, the decrease in the turn-on voltage o
Publikováno v:
IOSR Journal of Applied Physics. 6:92-101
This paper reviews typical effects occurring in bipolar junction transistors (BJTs) due to gamma (γ) rays irradiation. The detrimental consequences of this interaction can be categorized into two: the transfer of energy to electrons due to ionizatio
Autor:
Fuei Pien Chee, Haider F. Abdul Amir
Publikováno v:
Advanced Materials Research. 701:71-76
Electronic device that subjected to various effects by radiations can cause small interferences such as noises in the circuit. These effects are especially critical in operating environment such as outer space, where radiation comes in stronger and m
Autor:
Haider F. Abdul Amir, Fuei Pien Chee
Publikováno v:
International Journal of Applied Physics and Mathematics. :341-344
Publikováno v:
AIP Conference Proceedings.
Neutron radiation causes significant changes in the characteristics of MOS devices by the creation of oxide-trapped charge and interface traps. The degradation of the current gain of the GF4936 dual n-channel depletion mode MOS transistor, caused by
Autor:
Haider F. Abdul Amir, Fuei Pien Chee
Publikováno v:
Advanced Materials Research. 173:1-6
In this research, optoelectronic devices consisted of an infrared light emitting diode and a phototransistor with no special handling or third party-packaging were irradiated to ionizing radiation utilizing x-rays. It was found that the devices under
Autor:
Haider F. Abdul Amir, Fuei Pien Chee
Publikováno v:
Journal of Computers. 9
Performance and properties of bipolar junction transistor (BJT) devices are affected due to the harsh radiation environment. This report reviews the typical effects occurring in BJT devices due to irradiation with x-rays. The defect parameters on the
Publikováno v:
2014 International Conference on Computational Science and Technology (ICCST).
Study for penetration of nuclear radiation into semiconductor materials had been of theoretical interest and of practical important in these recent years, driven by the scaling down of semiconductor materials. This paper reviews the typical effects o