Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Harriott A"'
Autor:
H. H. Wade, R. A. Hamm, Henryk Temkin, C. H. Chu, Y. F. Hsieh, Yuh-Lin Wang, Lloyd R. Harriott
Publikováno v:
Materials Chemistry and Physics. 33:158-164
A finely focused ion beam (FIB) of Ga + was used to write patterns with nanometer lateral dimensions on InP substrate that are covered with ultrathin oxide layers. Patterns were transferred into the substrates, several hundred nanometers deep, by Cl
Autor:
L.R. Harriott, X.L. Yeh
Publikováno v:
Precision Engineering. 13:170-176
A new method has been explored to measure submicrometre relative motions of two piece parts similar to those used in laser packages. The Si/PbSn/BeCu solder joints were first polished to be optically flat and then a grid was engraved across the inter
Autor:
L.R. Harriott
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:802-810
Focused ion beam machine technology is generally divided into two distinct categories according to the intended applications. These are: (1) low-energy (10–30 keV) heavy-ion beam (usually Ga) systems used in sputtering and ion-induced material depo
Publikováno v:
Journal of Applied Physics. 68:4820-4824
Focused ion beam stimulated deposition of aluminum from trimethylamine alane, a white solid, and triethylamine alane, a colorless liquid, is reported. Initiation of growth on Si and SiO2 substrates is enhanced by in situ sputter cleaning of the surfa
The main goal of this project was to develop new lithographic and nanofabrication approaches for the assembly of novel nanoelectronic and nanomagnetic device structures. Our team's interests, expertise and facilities spanned materials synthesis, nano
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1320f74a951d5d6927d615f4d74eba19
https://doi.org/10.21236/ada468815
https://doi.org/10.21236/ada468815
Publikováno v:
MRS Proceedings. 961
Giant magnetoresistive (GMR) materials-based magnetic random access memory (MRAM) has become attractive due to non-volatility, speed and density1. The vertical MRAM (VMRAM) design model shows good signal level and high speed and density potential. Th
Autor:
Yuh-Lin Wang, Lloyd R. Harriott, J. S. Weiner, R. A. Hamm, Dan Ritter, Mônica A. Cotta, H. H. Wade, Henryk Temkin
Publikováno v:
Applied Physics Letters. 61:1936-1938
We demonstrate the use of an ultrathin (≊5 nm) Si layer deposited on InP substrates as a mask in selective area epitaxy of InGaAs by metalorganic molecular beam epitaxy. Patterns of varying shapes and sizes, from 5 to 0.5 μm, were written on the m
Publikováno v:
Applied Physics Letters. 57:1864-1866
We describe, for the first time, the preparation of InGaAs/InP homojunction confined buried‐heterostructure lasers by high vacuum processing techniques. Lithography and waveguide mesa etching were carried out using ultrathin native oxide masking, f
Autor:
L. R. Harriott
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:899-901
Accurate measurement of the beam diameter for a finely focused ion beam is difficult using conventional methods which have been applied in electron beam systems. Generally, the beam is scanned across an abrupt edge while measuring beam current or sec
Publikováno v:
Applied Physics Letters. 56:749-751
We have studied the mechanism of increased etch rate induced in InP substrates by focused Ga ion implantation and Cl2 etching. We cannot account for the depth of surface steps formed in this process with a purely kinetic mechanism. The preferential e