Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Tadahiro Ohmi"'
Publikováno v:
Journal of Applied Physics. 89:3156-3161
The characteristics of an ion implantation-induced defect in a silicon substrate are investigated. This defect is considered to be a complex of a point defect and a substrate dopant atom. The experiments are conducted by focusing on the dependence of
Autor:
K. Kawai, Kazuhide Ino, Mo-Chiun Yu, Toshikuni Shinohara, Tadahiro Ohmi, Mizuho Morita, T. Ushiki
Publikováno v:
Microelectronics Reliability. 39:327-332
The effects of ion species/ion bombardment energy in sputtering deposition process on gate oxide reliability have been experimentally investigated. The use of xenon (Xe) plasma instead of argon (Ar) plasma in tantalum (Ta) film sputtering deposition
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:2627-2635
The effects of ion bombardment conditions on the crystallographic and electrical properties of tantalum thin films grown on SiO2 and Si have been systematically investigated in Ta thin film formation process employing low-energy (
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 9:230-240
We have demonstrated that high-efficiency in situ chamber cleaning with short gas residence time is possible for SiO/sub 2/ etching chambers by use of NF/sub 3/ plasma, and that the endpoint determination of the cleaning is possible by monitoring the
Autor:
Tadahiro Ohmi, Wataru Shindo
Publikováno v:
Journal of Applied Physics. 79:2347-2351
In low‐temperature (300–350 °C) silicon epitaxy employing low‐energy inert‐gas ion bombardment on a growing film surface, the effects of ion bombardment energy and ion flux as well as that of ion species on the crystallinity of a grown silic
Publikováno v:
Applied Surface Science. :422-427
The self-limited atomic-layer etching of Si(100), (111), (110) and (211) has been investigated by alternated chlorine adsorption and low-energy Ar+ ion irradiation using an ultraclean electron cyclotron resonance apparatus. The etch rate per cycle is
Autor:
Tadahiro Ohmi, Tadashi Shibata
Publikováno v:
Thin Solid Films. 241:159-166
Very low-temperature formation of high-quality thin films having ideal interface characteristics has been demonstrated by a high-precision controlled low-energy ion bombardment process. In this process, films are grown under concurrent bombardment of
Publikováno v:
ChemInform. 23
Fomnation of giant-grain copper thin films on SiO 2 by a low-kinetic energy particle process followed by thermal annealing has been investigated. When Cu films are grown on SiO 2 by the process under a sufficient amount of energy deposition, they exh
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 5(4):337-346
An ultraclean (UC) magnetically enhanced reactive ion etcher (MERIE) is proposed to overcome the limitations of the present-state MERIE available commercially. The sensitivity of gas compositions, pumping speed, substrate temperature and magnetic fie
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 5(3):223-233
It is reported that important plasma parameters for reactive ion etching (RIE) processes, such as ion energy and ion flux density, can be extracted from a simple RF waveform analysis at the excitation electrode in a conventional cathode-coupled, para