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of 3
pro vyhledávání: '"Saafie Salleh"'
Publikováno v:
Jurnal Teknologi. 78
The physical phenomena associated with the stopping of energetic ions in semiconductor materials have always been a subject which receives great theoretical and experimental interest. Consequently, bombardment of high energy particles and high energy
Publikováno v:
2011 IEEE Regional Symposium on Micro and Nano Electronics.
Study for defect in semiconductors induced by ionizing radiation has become much more sophisticated in this recent year, driven by the current development in the ongoing miniaturization of silicon (Si) semiconductor industry. In this paper, the damag
Publikováno v:
2011 Fourth International Conference on Modeling, Simulation and Applied Optimization.
Studies for introduction of atoms into a solid substrate by bombardment of the solid with ions in the electron-volt (eV) to mega-electron-volt (MeV) energy range have always received great interest. Gallium Arsenide (GaAs) is a basic material for mos