Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Tadahiro Ohmi"'
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 5(4):337-346
An ultraclean (UC) magnetically enhanced reactive ion etcher (MERIE) is proposed to overcome the limitations of the present-state MERIE available commercially. The sensitivity of gas compositions, pumping speed, substrate temperature and magnetic fie
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 5(3):223-233
It is reported that important plasma parameters for reactive ion etching (RIE) processes, such as ion energy and ion flux density, can be extracted from a simple RF waveform analysis at the excitation electrode in a conventional cathode-coupled, para
Autor:
M. Miyawaki, Tadahiro Ohmi
Publikováno v:
IEEE Transactions on Electron Devices. 38:1037-1043
Reduction of fixed-pattern noise in the base-stored image sensor (BASIS) is achieved with newly developed processes based on ultraclean technology. One is low kinetic-energy reactive ion etching to keep the Si/SiO/sub 2/ interface free from plasma da
Autor:
Masayuki Saeki, Fumikazu Mizutani, Yasuhiro Kawase, Yasuyuki Shirai, Masafumi Kitano, Tadahiro Ohmi
Publikováno v:
Journal of The Electrochemical Society. 154:C530
Aluminum alloys are key materials for advanced large-scale integration (LSI)/flat panel display (FPD) plasma process equipment to drastically improve the process performance. There exists a severe disadvantage for aluminum-alloy process chambers, how
Publikováno v:
Japanese Journal of Applied Physics. 33:505
We have demonstrated that high-efficiencyin situchamber cleaning with high gas flow rate is possible for SiO2reactive-ion-etching chambers by use of NF3plasma. The plasma of NF3gas, which has a low bond energy, can generate a high density of ions and