Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Utpal S. Joshi"'
Publikováno v:
Journal of Applied Physics. 130:024102
Adding functionalities to existing ferroelectric/ferromagnetic materials showed promising results with exciting physical mechanisms. Pure and bilayer films of strong ferromagnetic oxides, viz, BaFe12O19 (BaM) and La0.67Sr0.33MnO3 (LSMO), were fabrica
Publikováno v:
Solid State Phenomena. 209:18-22
Swift heavy ion (SHI) irradiation of materials induces variety of functionalities and tenability in advance materials. Recent observations of electrical switching in perovskite oxides have triggered a lot of interest for its potential use as non vola
Autor:
Komal H. Bhavsar, Utpal S. Joshi
Publikováno v:
Solid State Phenomena. 209:198-202
Perovskite manganite Pr0.7Ca0.3MnO3 (PCMO) thin film nanostructures were grown on different substrates by chemical solution deposition to investigate its electrical switching properties. Planar structures consisting of Ag/Pr0.7Ca0.3MnO3/Ag grown on S
Publikováno v:
Solid State Phenomena. 209:94-97
Resistance switching properties of nanostructured In2Subscript textO3 films grown on Pt and LaNiO3 (LNO) bottom electrodes have been investigated. High quality In2O3/LNO/SiO2 and In2O3/Pt/Ti/SiO2/Si heterostructures were grown by pulsed laser deposit
Publikováno v:
Radiation Effects and Defects in Solids. 166:718-723
Resistive random access memory is one of the candidate technologies for the promising next generation non-volatile memories with fast switching speed, low power consumption and non-destructive readout. The swift heavy ion (SHI)-induced resistive swit
Publikováno v:
Cryogenics. 35:61-65
Hf and Ca substituted samples with stoichiometric compositions (Y1 − xHfx)Ba2Cu3Oz with x = 0.0, 0.1, 0.2 and (Y0.85 − yCayHf0.15)Ba2Cu3Oz with y = 0.1, 0.2, 0.4, respectively, prepared under identical conditions have been characterized by d.c. m
Publikováno v:
AIP Conference Proceedings.
Resistance switching properties of nanostructured In2O3 films grown on Pt bottom electrode have been investigated for non volatile memory applications. Ag/In2O3/Pt/Ti/SiO2/Si heterostructures were fabricated by pulsed laser deposition and e-beam evap