Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Yiming Qu"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 829-836 (2019)
FinFET and fully depleted silicon-on-insulator (FDSOI) structures could further improve transistor's performance and, however, also introduce some new problems, especially the increasingly severer self-heating effect (SHE). In this paper, by utilizin
Autor:
Junkang Li, Yi Zhao, Wei Liu, Nuo Xu, Ran Cheng, O. Faynot, Yiming Qu, Bich-Yen Nguyen, Bing Chen
Publikováno v:
IRPS
In this work, we experimentally investigate the impact of measurement speed (μs-800 ps) on the characterization of reliability behaviors, hot carrier injection (HCI) and positive bias temerature instability (PBTI), for FDSOI nMOSFETs. The results sh
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
We demonstrate electrical characterizations within sub-1 ns to investigate the self-heating effect (SHE) in 14 nm FinFETs, for the first time. Thanks to the extremely fast I-V measurement speed (∼500 ps), the heat generation and dissipation process