Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Kristel Fobelets"'
Publikováno v:
Solid-State Electronics. 51:749-756
A novel 3D field effect transistor on SOI – screen-grid FET (SGrFET) – is proposed and an analysis of its DC behaviour is presented by means of 2D TCAD analysis. The novel feature of the SGrFET is the design of 3D insulated gate cylinders embedde
Autor:
K. Michelakis, S. Despotopoulos, A. Vilches, Kristel Fobelets, Christos Papavassiliou, Chris Toumazou
Publikováno v:
Solid-State Electronics. 49:591-594
The authors present the first to their knowledge monolithic inverting current mirror fabricated on heterostructure Si/SiGe technology, using buried silicon channel depletion-mode MOSFET transistors. Characterisation results both at DC and at high fre
Autor:
Kristel Fobelets, A. Vilches, D.G. Haigh, Rodney Loga, K. Michelakis, Christos A. Papavasiliou
Publikováno v:
R34
R19
R19
A detailed introduction to published analogue circuit design techniques using Si and Si/SiGe FET devices for very low-power applications is presented in this review. The topics discussed include sub-threshold operation in FET devices, micro-current m
Publikováno v:
International Journal of Electronics. 89:593-602
We present simulations of different analogue building blocks using n-type depletion-mode Si:SiGe modulation doped field effect transistors (MODFETs). The device parameters used are extracted from the dc measurements of the SiGe MODFETs by using the S
Publikováno v:
2006 25th International Conference on Microelectronics.
A novel 3D Field Effect Transistor on SOI - the screen grid FET (SGFET) $for ultra-low power applications is proposed and TCAD analysis of the device is presented. The device is designed with the aim of decoupling the need for aggressive scaling of t
Publikováno v:
MRS Proceedings. 913
A novel field effect transistor (FET) that uses 3-dimensional (3-D) embedded gate fingers – the Screen-Grid Field Effect Transistor (SGFET) – is proposed. The gating action of the SGFET is based on the design of multiple gating cylinders into the
Autor:
J. E. Velázquez, Kristel Fobelets
Publikováno v:
ResearcherID
This paper reports on the influence of the gate length reduction on the noise performance of strained‐Si surface channel MOSFETs for very low power applications. When the gate length is reduced from 100nm to 20nm an increase of the current gain is
Publikováno v:
Journal of Statistical Mechanics: Theory and Experiment. 2009:P01045
A theoretical study of the thermal noise in strained n-channel Si/SiGe MOSFETs (metal–oxide–semiconductor field effect transistors) is presented. The study was carried out using a 2D device simulator based on the hydrodynamic model and the impeda
Publikováno v:
Semiconductor Science and Technology. 23:095006
Two-dimensional (2D) technology computer-aided design (TCAD) is used to analyze and compare the multi-gate digital performance of the screen-grid field effect transistor (SGrFET) with a finFET. The switching speed of the all-n-type inverter is ten ti
Publikováno v:
ResearcherID
The screen grid field effect transistor (SGrFET) is an oxide-gated FET with a novel 3D gating configuration perpendicular to the current flow in the channel. The multiple gate character of the SGrFET lends itself perfectly to compact logic applicatio
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