Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Pengfei Guo"'
Autor:
Ran Cheng, Eng Soon Tok, Wei Wang, Yee-Chia Yeo, Xiao Gong, Yue Yang, Lanxiang Wang, Pengfei Guo
Publikováno v:
ECS Transactions. 64:851-868
Germanium-tin (GeSn) has high hole mobility and is a promising channel material for scaling the supply voltage towards 0.5 V for high performance p-channel field-effect transistors (pFETs) in the sub-10 nm technology nodes. In this paper, we discuss
Publikováno v:
ECS Journal of Solid State Science and Technology. 3:Q162-Q168
Autor:
Yue Yang, Wei Wang, Pengfei Guo, Lanxiang Wang, Genquan Han, Kain Lu Low, Xiao Gong, Yee-Chia Yeo
Publikováno v:
IEEE Transactions on Electron Devices. 60:4048-4056
We report the demonstration of germanium-tin (GeSn) p-channel tunneling field-effect transistor (p-TFET) with good device performance in terms of on-state current (Ion). With the incorporation of Sn, the conduction band minima at Γ-point of GeSn all
Autor:
Eugene Y.-J. Kong, Ran Cheng, Christelle Veytizou, Bich-Yen Nguyen, Pengfei Guo, Yee-Chia Yeo, Bin Liu, Qian Zhou, Nicolas Daval, Chunlei Zhan, Yue Yang, Daniel Delprat
Publikováno v:
IEEE Transactions on Electron Devices. 60:2135-2141
We report the first demonstration of a p-channel Ω-gate Germanium (Ge) multiple-gate field-effect transistor (MuGFET) on a Germanium-on-Insulator (GeOI) substrate with in situ Boron (B)-doped Ge (Ge:B) raised source/drain (RSD). Detailed process opt
Autor:
Shaojian Su, Wei Wang, Chunlai Xue, Pengfei Guo, Genquan Han, Xiao Gong, Buwen Cheng, Guangze Zhang, Yue Yang, Yee-Chia Yeo, Lanxiang Wang
Publikováno v:
Solid-State Electronics. 83:66-70
High-mobility strained Ge 0.958 Sn 0.042 p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide [(NH 4 ) 2 S] surface passivation were demonstrated. A ∼10 nm thick fully-strained single crystalline GeSn layer
Publikováno v:
ECS Transactions. 50:979-986
Germanium Tin (Ge1-xSnx) as a group IV material has a direct and small band-gap for x > 0.11, which is attractive for the application in tunneling field-effect transistor (TFET). In this work, the design of Ge1-xSnx TFET operating at low supply volta
Publikováno v:
ECS Transactions. 50:1025-1030
We investigate the growth of in situ boron (B) doped Ge (denoted as Ge:B) on Si(100), (110) and (111) substrates at low temperature using an ultra-high vacuum chemical vapor deposition (UHVCVD) tool. The growth rate of Ge:B on Si(100) is higher than
Publikováno v:
ECS Transactions. 50:971-978
In this work, high quality epitaxial germanium (Ge) was successfully grown on In0.53Ga0.47As substrate using a metal-organic chemical vapor deposition (MOCVD) tool. The energy band alignment between the Ge layer and In0.53Ga0.47As was investigated us
Autor:
Wei Wang, Yee-Chia Yeo, Zexiang Shen, Linfeng Sun, Genquan Han, Xiao Gong, Ran Cheng, Pengfei Guo, Hailong Hu
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:P138-P145
Autor:
Genquan Han, Dongliang Zhang, Jisheng Pan, Eng Soon Tok, D.A. Antoniadis, Zheng Zhang, Pengfei Guo, Buwen Cheng, Chunlai Xue, Fan Bai, Xiao Gong, Yue Yang, Yee-Chia Yeo, Guangze Zhang, Ran Cheng, Shaojian Su
Publikováno v:
IEEE Electron Device Letters. 34:339-341
In this letter, we report the first study of the dependence of carrier mobility and drive current IDsat of Ge0.958Sn0.042 p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) on surface orientations. Compressively strained Ge0.958S