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pro vyhledávání: '"Xiufei Hu"'
Autor:
Xiangang Xu, Xiufei Hu, Peng Duan, Dufu Wang, Xiaobo Hu, Jinying Yu, Xuejian Xie, Yan Peng, Xiaotong Han, Xiwei Wang
Publikováno v:
Materials, Vol 13, Iss 4510, p 4510 (2020)
Materials
Volume 13
Issue 20
Materials
Volume 13
Issue 20
We report herein high-resolution x-ray diffraction measurements of basal plane bending of homoepitaxial single-crystal diamond (SCD). The results reveal that growth parameters such as temperature, growth time and basal plane bending of the substrate