Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Yasuhiro Ueda"'
Publikováno v:
Japanese Journal of Applied Physics. 41:2559-2562
We have introduced a transparent AlGaAs cap layer instead of a conventional GaAs cap layer into high-power 660-nm-band-laser diodes with weaker optical confinement in the perpendicular direction, since this structure enables us to weaken the optical
Publikováno v:
Japanese Journal of Applied Physics. 43:L27-L29
We have realized, for the first time, a UV sensor that operates at temperatures up to 700°C by using N+ implantation into 6H-SiC. The photocurrent of the sensor increased with temperature, and at 400°C and 700°C, the photocurrent is approximately
Publikováno v:
Journal of Applied Physics. 103:113513
The temperature-pressure-volume (T-P-V) data of the B2 phase of sodium chloride (NaCl) were measured at high temperatures between 1023 and 1973K, and high pressures between 22.9 and 26.3GPa, using synchrotron powder x-ray diffraction experiments with
Publikováno v:
Japanese Journal of Applied Physics. 37:1817
A 6H-SiC Au-gate metal-semiconductor field-effect transistor (MESFET) was fabricated by reactive ion etching (RIE) for device isolation and ion implantation for the n+ contact regions of the source and drain. The device exhibited a pinch-off voltage
Autor:
Katsumi Yagi, Tatsuya Kunisato, Takao Yamaguchi, Yasuhiko Matsushita, Tatsuhiko Niina, Junko Suzuki, Yasuhiro Ueda, Takahiro Uetani
Publikováno v:
Japanese Journal of Applied Physics. 34:1833
Dependence of SiC blue light-emitting diode (LED) efficiency on the p-type layer growth temperature in the liquid-phase epitaxial process was investigated. The external quantum efficiency of LEDs fabricated at a lower growth temperature was higher th
Publikováno v:
Japanese Journal of Applied Physics. 19:379-380
Publikováno v:
Japanese Journal of Applied Physics. 22:501
A new type of high speed liquid crystal switching array is developed. The device has a simplified electrode configuration which allows a simple high speed operation and a small size cell design. Short response time of 0.5 msec and high ON/OFF light t