Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Chang-Il Kim"'
Publikováno v:
Physics Letters A. 453:128474
Publikováno v:
Applied Surface Science. 561:149957
Al-doped ZnO (AZO) has attracted significant attention as a transparent electrode with low cost, high transmittance, high electrical conductivity, and excellent mechanical flexibility. A high-resolution patterning process is required for its applicat
Publikováno v:
Applied Surface Science. 320:494-501
In this study, ZnO–SnO2 nanocomposite thin film was prepared on glass substrates with different film thicknesses and annealing temperatures through a sol–gel method. From the results of thermogravimetric analysis (TGA), it was deduced that the Zn
Publikováno v:
Applied Surface Science. 292:915-920
In this work, the etching characteristics of the zinc tin oxide (ZTO) thin films were investigated as a function of the BCl3/Ar gas mixture ratio in the inductively coupled plasma system. As the BCl3 content in Ar plasma increased, the etch rate of Z
Publikováno v:
Journal of the Korean Physical Society. 54:1054-1058
Publikováno v:
Journal of the Korean Physical Society. 54:1002-1005
The etching properties of ZnO thin lms in an inductively coupled Cl2/BCl3/Ar plasma (ICP) were studied in terms of the etch rate and the selectivity as functions of the gas mixing ratio, the ICP coil power and the dc bias voltage. A maximum etch rate
Autor:
Seung-Chan Moon, Cheol-In Lee, Tae-Woo Jung, Sangwook Park, Hwan-Jun Kim, Chang-Il Kim, Gwan-Ha Kim, Sewung-Kwon Lee, Dong-Pyo Kim, Jong-Chang Woo
Publikováno v:
Journal of the Korean Physical Society. 54:934-938
High-k thin lms (HfO2 and Al2O3) were etched in HBr/Ar high-density plasma. HfO2 and Al2O3 with high dielectric constants are promising candidates for the gates of metal-oxide-semiconductor devices. The maximum etch rates for HfO2 and Al2O3 were 49.1
Autor:
Dong-Pyo Kim, Chang-Il Kim
Publikováno v:
Journal of the Korean Physical Society. 43:738-742
Publikováno v:
Journal of the Physical Society of Japan. 59:2414-2425
This paper presents formulation and results of a self-consistent dynamical theory which can describe the crossover from the local-moment state to the heavy-fermion state with decreasing temperatures. The theory is an extension of the non-crossing app
Publikováno v:
Japanese Journal of Applied Physics. 53:08NB05
ZrO2 thin films were investigated by surface characterization in a Cl2/Ar gas mixture adaptively coupled plasma system. The plasmas were characterized by optical emission spectroscopy analysis. The crystal structures of the films etched with gases at