Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Tadahiro Ohmi"'
Publikováno v:
Fluctuation and Noise Letters. 10:431-445
On account of low resistivity contacts and of a newly developed device, the investigation of the 1/f noise at high drain current has been made possible. Therefore, it has been acknowledged that the correlated carrier number and mobility fluctuations
Publikováno v:
Journal of the Korean Physical Society. 59:391-401
Current silicon technologies are now facing very severe limitations such as no more progress on the speed performance of microprocessors from Intel at around a 3-GHz clock rate, for 5 years. Current silicon technologies can fabricate large scale inte
Publikováno v:
Japanese Journal of Applied Physics. 47:2668-2671
This work demonstrates the performance comparison of ultrathin fully depleted (FD) silicon on insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) with various structures. The current drivability and immunity to the short
Autor:
Genya Fujita, Tomoyuki Suwa, Hiroto Takahashi, Tadahiro Ohmi, Akinobu Teramoto, Yuki Kumagai, Shigetoshi Sugawa
Publikováno v:
Japanese Journal of Applied Physics. 46:2148-2152
The gate leakage current which influences the charge hold time of flash memories is characterized as very localized in tunnel oxide area. And the leakage current value is relatively low as the quantity of the current. In conventional test-element-gro
Publikováno v:
Japanese Journal of Applied Physics. 46:2054-2057
Evaluating the statistical variation of the metal–oxide–semiconductor field-effect transistors (MOSFETs) is important for realizing the accurate analog circuits and highly large-scale-integration (LSI) devices. In this paper, a new evaluation met
Autor:
Shigetoshi Sugawa, Ichirou Takahashi, Keita Azumi, Akinobu Teramoto, Tadahiro Ohmi, Masaki Hirayama
Publikováno v:
Japanese Journal of Applied Physics. 45:7336-7340
Sr2(Ta1-x,Nbx)2O7 (STN, x=0.3) is suitable for use as ferroelectric materials for ferroelectric memory field-effect transistors (FETs), because it has a low dielectric constant and a high heat resistance. A new technology that enables the control of
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 73:74-80
For realization of ultrahigh-speed LSIs, devices with large current driving capabilities and interconnects with small parasitic resistances and small parasitic capacitances are desired. When a high-speed signal propagates along the conventional metal
Autor:
Tadahiro Ohmi, Shigetoshi Sugawa, Rihito Kuroda, Akinobu Teramoto, A. Yonezawa, Toshiki Obara
Publikováno v:
Japanese Journal of Applied Physics. 53:04EC19
The random telegraph noise (RTN) characteristics in numerous metal–oxide–semiconductor field-effect transistors were evaluated accurately with small floor noise of 59 µV. Because of the small floor noise RTN characteristics with small amplitudes
Publikováno v:
Japanese Journal of Applied Physics. 52:050203
The use of heavier noble gases such as Xe instead of the lighter Ar during the magnetron sputtering deposition of amorphous indium–gallium–zinc oxide films is introduced to the fabrication of their thin-film transistors. Higher mobility in the Xe
Autor:
Hiroshi Kambayashi, Akinobu Teramoto, Kazuhide Hasebe, Hirokazu Ueda, Yuichiro Morozumi, Takehiko Nomura, Tadahiro Ohmi, Katsushige Harada, Shigetoshi Sugawa
Publikováno v:
Japanese Journal of Applied Physics. 52:04CF09
High quality SiO2/Al2O3 gate stack has been demonstrated for GaN metal–oxide–semiconductor (MOS) transistor. We confirmed that Al2O3 could realize a low interface-state density between Al2O3 and GaN, however, the breakdown field was low. By incor