Zobrazeno 21 - 30
of 63
pro vyhledávání: '"Martin Albrecht"'
Autor:
Patrick Vogt, Robert Schewski, C. Wouters, Oliver Bierwagen, Piero Mazzolini, Martin Albrecht
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022511-022511-8 (2019)
We here present an experimental study on (010)-oriented -Ga2O3 thin films homoepitaxially grown by plasma assisted molecular beam epitaxy. We study the effect of substrate treatments (i.e., O-plasma and Ga-etching) and several deposition parameters (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f94a5f4fbfd833dbfe58c91a2e6f3970
Publikováno v:
Nanomaterials
Volume 8
Issue 11
Nanomaterials, Vol 8, Iss 11, p 895 (2018)
Volume 8
Issue 11
Nanomaterials, Vol 8, Iss 11, p 895 (2018)
There is a growing interest in exploiting the functional properties of niobium oxides in general and of the T-Nb2O5 polymorph in particular. Fundamental investigations of the properties of niobium oxides are, however, hindered by the availability of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c1dbb6b99beb7d7ee91d30f3640ef303
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 13:1900169
Autor:
Detlef Klimm, Albert Kwasniewski, Robert Schewski, Andreas Fiedler, Steffen Ganschow, Matthias Bickermann, Isabelle Schulze-Jonack, Klaus Irmscher, Mike Pietsch, Thomas Schröder, Martin Albrecht, Zbigniew Galazka
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022512-022512-12 (2019)
Truly bulk ZnGa2O4 single crystals were obtained directly from the melt. High melting point of 1900 ± 20 °C and highly incongruent evaporation of the Zn- and Ga-containing species impose restrictions on growth conditions. The obtained crystals are
Autor:
Claudia Draxl, G. Wagner, Tobias Schulz, Martin Schmidbauer, Matthias Scheffler, S. Bin Anooz, Zbigniew Galazka, R. Grüneberg, C. Wouters, Robert Schewski, Klaus Irmscher, Andreas Popp, K. Lion, Martin Albrecht, Sergey V. Levchenko, Andreas Fiedler
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022515-022515-7 (2019)
APL Materials
APL Materials
We present a systematic study on the influence of the miscut orientation on structural and electronic properties in the homoepitaxial growth on off-oriented β-Ga2yO3 (100) substrates by metalorganic chemical vapour phase epitaxy. Layers grown on (10
Autor:
Stephen Faulkner, Jonathan A. Kitchen, Thorfinnur Gunnlaugsson, Dawn E. Barry, Martin Albrecht
The incorporation of chiral amphiphilic lanthanide-directed self-assembled Nd(III) complexes (Nd.13 and Nd.23) into stable Langmuir monolayers, and the subsequent Langmuir–Blodgett film formation of these, is described. The photophysical properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d67da2178ea3d8191a41158e2639e52
https://doi.org/10.1021/la402274s
https://doi.org/10.1021/la402274s
Autor:
Detlef Klimm, Rainer Bertram, Steffen Ganschow, Klaus Irmscher, Martin Albrecht, Zbigniew Galazka, Mike Pietsch, Reinhard Uecker, Mario Brützam, Roberto Fornari
Publikováno v:
Crystal Research and Technology. 45:1229-1236
Autor:
Dietmar Siche, Martin Schmidbauer, H-J Rost, Daniela Gogova, Roberto Fornari, T. Remmele, Rositsa Yakimova, Klaus Irmscher, Martin Albrecht
Publikováno v:
Crystal Research and Technology. 44:1078-1082
Techniques to reduce dislocation densities in GaN grown on foreign substrates are an interesting alternative to bulk growth as long as efficient bulk crystals growth techniques are not available, I ...
Publikováno v:
Superlattices and Microstructures. 46:277-285
Self-assembled and ordered silicon and germanium nanowires grown by physical vapor deposition (PVD) via vapor–liquid–solid (VLS) mechanism are presented. The morphology of the nanowires has been investigated by scanning electron microscopy (SEM)
Publikováno v:
Crystal Research and Technology. 43:651-655
The Al-polar surfaces of AlN wafers cut from physical vapor transport grown crystals were lapped and polished. Polishing procedures were developed to produce surfaces for epitaxial growth. The surface scratches and subsurface damage caused by mechani