Zobrazeno 1 - 10
of 682
pro vyhledávání: '"Lin, Yang"'
Publikováno v:
Key Engineering Materials. 945:71-76
In this work, 1200 V SiC JMOS devices with different Wsch (2 μm, 2.5 μm and 3 μm) are fabricated. The single unclamped inductive switching (UIS) tests under different Vgs_off (-5 V and 0 V) are carried out to investigate the avalanche capability.
Publikováno v:
Nano Letters. 23:4000-4007
Autor:
Jörg Schöpf, Arsha Thampi, Peter Milde, Dmytro Ivaneyko, Svitlana Kondovych, Denys Y. Kononenko, Lukas M. Eng, Lei Jin, Lin Yang, Lena Wysocki, Paul H. M. van Loosdrecht, Kornel Richter, Kostiantyn V. Yershov, Daniel Wolf, Axel Lubk, Ionela Lindfors-Vrejoiu
Publikováno v:
Nano Letters. 23:3532-3539
Autor:
Jiahe Liu, Xiaoyan Lyu, Ziwei Zhou, Lin Yang, Jie Zeng, Yao Yang, Zhenghuan Zhao, Rui Chen, Xin Tong, Jiaqi Li, Hailan Liu, Yuan Zou
Publikováno v:
ACS Applied Materials & Interfaces. 15:17324-17334
Autor:
Lin Yang, ZeHua Yang, Jian He, Qianqian Cao, Ruilin Zhang, Qiao Wang, Zhixi Chen, Weiwei Chen, Weiguo Wang
Publikováno v:
ACS Applied Nano Materials. 6:4288-4296
Publikováno v:
ACS Applied Nano Materials. 6:3974-3980
Autor:
Yanyan Huang, Cheng Zhou, Keyan Chen, Yuxin Yang, Jiankun Xiong, Jianping Yang, Yang Guo, Guijun Mao, Lin Yang, Fuheng Nie, Xia Li, Qinghua Zhou
Publikováno v:
Materials Science and Technology. :1-12
Autor:
Linlin Yang, Bingbing Chen, Kunpeng Ge, Jianxin Guo, Feng Li, Lin Yang, Ying Xu, Dengyuan Song, Xueliang Yang
Publikováno v:
Journal of Materials Science. 58:3701-3708
Publikováno v:
Journal of Materials in Civil Engineering. 35
Publikováno v:
ACS Applied Materials & Interfaces. 15:4092-4100