Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Sun, Jin"'
Publikováno v:
Journal of Nanoscience and Nanotechnology. 14:9534-9540
Etching characteristics and mechanisms of low-temperature SiN(x) thin films for nano-devices in CH2F2/O2/Ar inductively-coupled plasmas were studied. The etching rates of SiN(x) thin films as well as the etching selectivities over Si and photoresist
Publikováno v:
Journal of Nanoscience and Nanotechnology. 12:3464-3468
Random plasma treatment techniques were used as a texturing method to reduce the surface reflection of glass substrates in thin film solar cells. Various gas mixtures were used for the plasma discharge in an effort to examine the texturing mechanism.
Publikováno v:
Journal of Nanoscience and Nanotechnology. 14:3790-3792
In this study, we describe the effects of various thicknesses of triple p/i buffer layers and hydrogen treatment on various performances in the fabrication of transparent a-Si:H solar cells. For the increment of buffer layer thickness, V(oc) increase
Publikováno v:
Journal of Nanoscience and Nanotechnology. 7:4180-4184
Nanocomposite ZrO2/Al2O3 (ZAO) films were deposited on Si by plasma-enhanced atomic layer deposition and the film characteristics including interfacial oxide formation, dielectric constant (k), and electrical breakdown strength were investigated with
Autor:
Hong-yan Peng, Bao-ling Chen, Li-xin Zhao, Run Xu, Jian Huang, Yu-qiang Chen, Yu-jie Luo, Yiben Xia, Zeng-sun Jin, Lin-yun Wang
Publikováno v:
Carbon. 49:355
Publikováno v:
Electrochemical and Solid-State Letters. 9:F8
The electrical properties of aluminum silicate (AlSi x O y ) films grown at 120 and 150°C by plasma-enhanced atomic layer deposition were investigated for the application on flexible devices. AlSi x O y films with dielectricconstants of 5.6 and 6.8
Publikováno v:
Electrochemical and Solid-State Letters. 8:F25
Publikováno v:
Electrochemical and Solid-State Letters. 8:F47
Publikováno v:
Electrochemical and Solid-State Letters. 7:F73
High-quality TiO 2 films were grown at 250°C by plasma-enhanced atomic layer deposition (ALD) with a mixture of O 2 and N 2 plasma for the first time. The films exhibited an improved uniformity of within ′3%, a reliable growth rate of 0.042 nm/cyc
Publikováno v:
Electrochemical and Solid-State Letters. 7:C13
Very uniform Al 2 O 3 films could be deposited on polyethersulfone (PES) by plasma-enhanced atomic layer deposition (PEALD) using O 2 as O-precursor at temperatures ranging from 90 to 150°C. Although the use of rf plasma was prone to induce bending