Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Martin Albrecht"'
Autor:
Mariia Anikeeva, Marcin Siekacz, Tobias Schulz, Martin Albrecht, Toni Markurt, Liverios Lymperakis, P. Wolny
Publikováno v:
Physical Review Materials. 4
The incorporation of indium in GaN (0001) surfaces in dependence of strain is investigated by combining molecular-beam epitaxy (MBE) growth, quantitative transmission electron microscopy, and density-functional theory (DFT) calculations. Growth exper
Autor:
V. N. Jmerik, Vladimir I. Kozlovsky, Ping Wang, Peng Jin, Weikun Ge, Tao Wang, He Chenguang, Guang Chen, V. P. Martovitsky, Xin-he Jiang, Viacheslav V. Ratnikov, Xuelin Yang, Alexey A. Toropov, Xinqiang Wang, Tobias Schulz, Xin Rong, Jun-jie Shi, Stefan Ivanov, Weiying Wang, Xu Fujun, Martin Albrecht, Zhixin Qin, Bo Shen
Publikováno v:
Advanced Materials. 28:7978-7983
Quasi-2D GaN layers inserted in an AlGaN matrix are proposed as a novel active region to develop a high-output-power UV light source. Such a structure is successfully achieved by precise control in molecular beam epitaxy and shows an amazing output p
Autor:
Mariia Anikeeva, Ewa Grzanka, Martin Albrecht, Marta Sawicka, Tobias Schulz, Torsten Ernst, Grzegorz Staszczak, Czeslaw Skierbiszewski, Joanna Moneta, Tadeusz Suski, Marcin Siekacz, P. Wolny, A. Feduniewicz-Żmuda
Publikováno v:
Superlattices and Microstructures. 133:106209
In this work we investigate InGaN/GaN short period superlattices (SPSLs) grown on (0001) GaN and on relaxed In0.2Ga0.8N buffers with varying degree of plastic relaxation. The SPSLs were fabricated by plasma assisted molecular beam epitaxy (PAMBE). De
Autor:
Patrick Vogt, Robert Schewski, C. Wouters, Oliver Bierwagen, Piero Mazzolini, Martin Albrecht
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022511-022511-8 (2019)
We here present an experimental study on (010)-oriented -Ga2O3 thin films homoepitaxially grown by plasma assisted molecular beam epitaxy. We study the effect of substrate treatments (i.e., O-plasma and Ga-etching) and several deposition parameters (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f94a5f4fbfd833dbfe58c91a2e6f3970
Autor:
Esther Baumann, Fabrizio R. Giorgetta, Laurent Nevou, Martin Albrecht, L. Doyennette, Maria Tchernycheva, T. Remmele, Edith Bellet-Amalric, Sylvain Leconte, Fabien Guillot, F. H. Julien, Eva Monroy, Daniel Hofstetter
Publikováno v:
Superlattices and Microstructures. 40:418-425
In this work, we present the plasma-assisted molecular-beam epitaxial growth of quantum well infrared photodetector (QWIP) structures, including the Si-doped GaN/AlN short-period superlattice of the active region, conductive AlGaN claddings and integ
Autor:
Maria Tchernycheva, Laurent Nevou, Eva Monroy, Martin Albrecht, L. Doyennette, F. H. Julien, Fabien Guillot, T. Remmele, Sylvain Leconte, Raffaele Colombelli, E. Warde
Publikováno v:
Superlattices and Microstructures. 40:412-417
We present a systematic investigation of ultrathin single and coupled GaN/AlN quantum wells grown by molecular beam epitaxy for applications to unipolar devices. Narrow Lorentzian-shaped intersubband absorptions are demonstrated tunable at telecommun
Autor:
Martin Albrecht, Horst P. Strunk, B. Neubauer, Martin Stutzmann, Andreas Rosenauer, Oliver Ambacher, Dagmar Gerthsen
Publikováno v:
Materials Science and Engineering: B. 59:182-185
Composition fluctuations in Al x Ga 1 −x N-layers ( x =0.25 and 0.35) are investigated on an atomic scale by high-resolution transmission electron microscopy (HRTEM). The samples were grown by plasma induced molecular beam epitaxy on Al 2 O 3 (0001
Autor:
Giancarlo Salviati, Karl Joachim Ebeling, M Mayer, A Pelzmann, Markus Kamp, W. Dorsch, Martin Albrecht, Horst P. Strunk, Silke Christiansen, C. Zanotti-Fregonara
Publikováno v:
Materials Science and Engineering: B. 43:296-302
We investigate the microstructural development during growth and the related electro-optical properties of gallium nitride (GaN) films deposited on (0001) sapphire substrates by gas source molecular beam epitaxy. We use transmission electron microsco
Publikováno v:
Solid State Phenomena. :385-396
Autor:
Karl Joachim Ebeling, Silke Christiansen, Martin Albrecht, D Sowada, M Mayer, Horst P. Strunk, Bernd Holländer, Siegfried Mantl, Markus Kamp, T Rotter, A Pelzmann, C. Kirchner
Publikováno v:
Scopus-Elsevier
We report on a comprehensive study of the defect structure in GaN grown on c-oriented sapphire by gas source molecular beam epitaxy and metal organic vapour phase epitaxy. Transmission electron microscopy is used to investigate the defect structures