Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Martin Albrecht"'
Autor:
Ewa Grzanka, Artur Lachowski, Tobias Schulz, Robert Czernecki, Sławomir Kret, Lucja Marona, Julita Smalc-Koziorowska, Szymon Grzanka, Roman Hrytsak, Martin Albrecht, M. Grabowski, Henryk Turski, Toni Markurt, Mike Leszczynski
Publikováno v:
ACS Applied Materials & Interfaces. 13:7476-7484
In this work, we study the thermal degradation of In-rich InxGa1–xN quantum wells (QWs) and propose explanation of its origin based on the diffusion of metal vacancies. The structural transformatio...
Autor:
Kookrin Char, Wahib Aggoune, Martina Zupancic, Claudia Draxl, Toni Markurt, Martin Albrecht, Youjung Kim, Young Mo Kim
Publikováno v:
Physical Review Materials. 4
Epitaxial perovskite oxide interfaces with different symmetry of the epitaxial layers have attracted considerable attention due to the emergence of novel behaviors and phenomena. In this paper, we show by aberration-corrected transmission electron mi
Autor:
C. Wouters, Toni Markurt, Matthias Scheffler, A. Hassa, Marius Grundmann, H. von Wenckstern, Luca M. Ghiringhelli, Christopher Sutton, Martin Albrecht, Robert Schewski
Publikováno v:
Physical Review Materials. 4
We investigate the phase diagram of the heterostructural solid solution ${({\mathrm{In}}_{x}{\mathrm{Ga}}_{1\text{\ensuremath{-}}x})}_{2}{\mathrm{O}}_{3}$ both computationally, by combining cluster expansion and density functional theory, and experim
Autor:
Mariia Anikeeva, Marcin Siekacz, Tobias Schulz, Martin Albrecht, Toni Markurt, Liverios Lymperakis, P. Wolny
Publikováno v:
Physical Review Materials. 4
The incorporation of indium in GaN (0001) surfaces in dependence of strain is investigated by combining molecular-beam epitaxy (MBE) growth, quantitative transmission electron microscopy, and density-functional theory (DFT) calculations. Growth exper
Autor:
Zbigniew Galazka, Jutta Schwarzkopf, Robert Schewski, Daniel Pfützenreuter, Klaus Irmscher, Andrea Dittmar, Martin Albrecht, Martina Zupancic
Publikováno v:
Nanotechnology. 32:505609
The use of LaInO3with (110) surface orientation was investigated as a novel orthorhombic substrate for the epitaxial growth of semiconducting BaSnO3thin films. On the basis of reflection high-energy electron diffraction, energy dispersive x-ray analy
Autor:
Thomas Schroeder, Klaus Irmscher, Detlef Klimm, Albert Kwasniewski, Raimund Grueneberg, Matthias Bickermann, Martin Albrecht, Andreas Popp, Steffen Ganschow, Saud Bin Anooz, Andrea Dittmar, Robert Schewski, Isabelle Hanke, Mike Pietsch, Uta Juda, Zbigniew Galazka, Tobias Schulz
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 67:100511
In the course of development of transparent semiconducting oxides (TSOs) we compare the growth and basic physical properties bulk single crystals of ultra-wide bandgap (UWBG) TSOs, namely β-Ga2O3 and Ga-based spinels MgGa2O4, ZnGa2O4, and Zn1-xMgxGa
Autor:
V. N. Jmerik, Vladimir I. Kozlovsky, Ping Wang, Peng Jin, Weikun Ge, Tao Wang, He Chenguang, Guang Chen, V. P. Martovitsky, Xin-he Jiang, Viacheslav V. Ratnikov, Xuelin Yang, Alexey A. Toropov, Xinqiang Wang, Tobias Schulz, Xin Rong, Jun-jie Shi, Stefan Ivanov, Weiying Wang, Xu Fujun, Martin Albrecht, Zhixin Qin, Bo Shen
Publikováno v:
Advanced Materials. 28:7978-7983
Quasi-2D GaN layers inserted in an AlGaN matrix are proposed as a novel active region to develop a high-output-power UV light source. Such a structure is successfully achieved by precise control in molecular beam epitaxy and shows an amazing output p
Autor:
Robert Schewski, M. Baldini, Andreas Fiedler, Klaus Irmscher, Detlef Klimm, Martin Albrecht, Günter Wagner
Publikováno v:
Journal of Materials Science. 51:3650-3656
Sn-doped β-Ga2O3 epitaxial layers have been grown on (100) β-Ga2O3 substrates by metal organic vapour-phase epitaxy. Triethylgallium (TEGa), molecular oxygen (O2) and tetraethyltin (TESn) were used as Ga, O and Sn precursors, respectively. Layers g
Publikováno v:
APL Materials, Vol 8, Iss 8, Pp 089101-089101-2 (2020)
Autor:
Mariia Anikeeva, Ewa Grzanka, Martin Albrecht, Marta Sawicka, Tobias Schulz, Torsten Ernst, Grzegorz Staszczak, Czeslaw Skierbiszewski, Joanna Moneta, Tadeusz Suski, Marcin Siekacz, P. Wolny, A. Feduniewicz-Żmuda
Publikováno v:
Superlattices and Microstructures. 133:106209
In this work we investigate InGaN/GaN short period superlattices (SPSLs) grown on (0001) GaN and on relaxed In0.2Ga0.8N buffers with varying degree of plastic relaxation. The SPSLs were fabricated by plasma assisted molecular beam epitaxy (PAMBE). De