Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Hisashi Yamada"'
Autor:
Hisashi Yamada, Mitsuaki Shimizu, Yoshihiro Sugawara, Naoto Noguchi, Yukihisa Takeda, Yongzhao Yao, Kazuyuki Tadatomo, Yukari Ishikawa
Publikováno v:
Japanese Journal of Applied Physics. 60:115501
Autor:
Toru Ujihara, Shunta Harada, Yosuke Tsunooka, Hisashi Yamada, Mitsuaki Shimizu, Shoichi Onda, Nobuhiko Kokubo, Sho Inotsume, Miho Tagawa, Fumihiro Fujie
Publikováno v:
Japanese Journal of Applied Physics. 60:SAAD03
The strain field of the tilted threading dislocation (TD) in a hydride vapor-phase epitaxy-grown c-plane (0001) GaN single crystal is demonstrated using Raman spectroscopy. In the two-dimensional mapping image of the E2 H peak shift around TDs, high-
Autor:
Akio Ohta, Noriharu Takada, Taishi Yamamoto, Katsunori Makihara, Seiichi Miyazaki, Nguyen Xuan Truyen, Tokio Takahashi, Mitsuaki Shimizu, Mitsuhisa Ikeda, Noriyuki Taoka, Hisashi Yamada
Publikováno v:
Japanese Journal of Applied Physics. 58:SIIB22
Photoluminescence properties of SiO2/GaN and Al2O3/GaN structures formed with plasma-enhanced chemical vapor deposition (PECVD) or atomic layer deposition (ALD) methods were systematically investigated. Intensities related to the band edge (BE) trans
Autor:
Noriyuki Taoka, Mitsuhisa Ikeda, Katsunori Makihara, Tokio Takahashi, Seiichi Miyazaki, Akio Ohta, Noriharu Takada, Taishi Yamamoto, Mitsuaki Shimizu, Hisashi Yamada, Nguyen Xuan Truyen
Publikováno v:
Japanese Journal of Applied Physics. 58:SEEC02
Autor:
Takayoshi Shimura, Takuji Hosoi, Akitaka Yoshigoe, Mitsuaki Shimizu, Takahiro Yamada, Tokio Takahashi, Daiki Terashima, Mikito Nozaki, Heiji Watanabe, Hisashi Yamada
Publikováno v:
Japanese Journal of Applied Physics. 58:SCCD06
Abstarct The impact of controlling Ga-oxide (GaO x ) interlayers in SiO2/GaO x /GaN gate stacks is investigated by means of physical and electrical characterizations. Direct deposition of SiO2 insulators produces thin GaO x interlayers, and subsequen
Autor:
Toru Ujihara, Shoichi Onda, Hisashi Yamada, Junji Ohara, Yosuke Tsunooka, Nobuhiko Kokubo, Shunta Harada, Fumihiro Fujie, Miho Tagawa, Mitsuaki Shimizu
Publikováno v:
Japanese Journal of Applied Physics. 58:SCCB06
Threading dislocations (TDs) in a HVPE-grown c-plane (0001) GaN single crystal were analyzed by micro Raman spectroscopy mapping. The mapping image exhibited the pairs of higher and lower wavenumber regions of peak shift of GaN, which corresponded to
Autor:
Shoichi Onda, Toru Ujihara, Nobuhiko Kokubo, Miho Tagawa, Mitsuaki Shimizu, Yosuke Tsunooka, Junji Ohara, Shunta Harada, Fumihiro Fujie, Hisashi Yamada
Publikováno v:
Applied Physics Express. 11:111001
The threading edge dislocations in a GaN crystal are analyzed via micro-Raman spectroscopy mapping. A clear contrast image of the peak shift from a higher wavenumber to a lower wavenumber is simulated. The direction from the higher-wavenumber region
Autor:
Shunta Harada, Kazukuni Hara, Toru Ujihara, Mitsuaki Shimizu, Nobuhiko Kokubo, Shoichi Onda, Miho Tagawa, Junji Ohara, Hisashi Yamada, Yosuke Tsunooka, Fumihiro Fujie
Publikováno v:
Applied Physics Express. 11:061002
We succeeded in measuring the density and direction of the edge component of threading dislocations (TDs) in c-plane (0001) GaN by micro-Raman spectroscopy mapping. In the micro-Raman spectroscopy mapping of the E2 H peak shift between 567.85 and 567
Autor:
Hisashi Yamada, Katsunori Makihara, Akio Ohta, Taishi Yamamoto, Nguyen Xuan Truyen, Tokio Takahashi, Mitsuhisa Ikeda, Osamu Nakatsuka, Mitsuaki Shimizu, Noriyuki Taoka, Seiichi Miyazaki
Publikováno v:
Japanese Journal of Applied Physics. 57:06KA05
The energy band structure of a Ga-oxide/GaN structure formed by remote oxygen plasma exposure and the electrical interface properties of the GaN metal–oxide–semiconductor (MOS) capacitors with the SiO2/Ga-oxide/GaN structures with postdeposition
Autor:
Seiichi Miyazaki, Mitsuhisa Ikeda, Katsunori Makihara, Mitsuaki Shimizu, Noriyuki Taoka, Nguyen Xuan Truyen, Tokio Takahashi, Hisashi Yamada, Akio Ohta
Publikováno v:
Japanese Journal of Applied Physics. 57:06KA01
The impacts of noble gas species (Ar and He) on the formation of a SiO2/GaN structure formed by a remote oxygen plasma-enhanced chemical vapor deposition (ROPE-CVD) method were systematically investigated. Atomic force microscopy revealed that ROPE-C