Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Harriott A"'
Autor:
Avellaneda Nicolás, Claudio Saddy Rodrigues Coy Claudio, Sarubbi Fillmann Henrique, Saad-Hossne Rogerio, Muñoz Juan Pablo, García-Duperly Rafael, Bellolio Felipe, Rotholtz Nicolás, Rossi Gustavo, Marquez V Juan Ricardo, Cillo Mariano, Lacerda-Filho Antonio, Carrie Augusto, Yuki Maruyama Beatriz, Sarubbi Fillmann Lucio, Silvino Craveiro Marcela Maria, Ferro Ezequiel, Londoño-Schimmer Eduardo, Iglesias Andrés, Bras Harriott Camila, Campana Juan Pablo, Londoño Estrada Daniel, Balachandran Rogini, Kotze Paulo Gustavo
Publikováno v:
Cirugía Española (English Edition).
Autor:
Wladyslaw Cichocki, Phillip Harriott
Publikováno v:
Revue québécoise de linguistique. 22:93-106
Cette étude porte sur l’évaluation de la prononciation des emprunts anglais en français acadien. 83 étudiants acadiens, divisés en trois groupes selon leur niveau de compétence en anglais, ont évalué huit emprunts. Ces mots avaient différe
Autor:
L.R. Harriott, X.L. Yeh
Publikováno v:
Precision Engineering. 13:170-176
A new method has been explored to measure submicrometre relative motions of two piece parts similar to those used in laser packages. The Si/PbSn/BeCu solder joints were first polished to be optically flat and then a grid was engraved across the inter
Autor:
Nabanita Majumdar, Nadine Gergel, David Routenberg, Bin Li, James M. Tour, Lin Pu, Lloyd R. Harriott, Yuxing Yao, John C. Bean
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23:1417
A nanowell device for the electrical characterization of metal–molecule–metal junctions was built using readily available processing tools and techniques. This device consisted of a nanoscale well, with a gold bottom, filled with a self-assemblin
Autor:
Donald Lawrence White, M. K. Smith, Cheng-fu Chen, Obert Wood, L. R. Harriott, Edward G. Lovell, Roxann L. Engelstad
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:3099
The International Technology Roadmap for Semiconductors defines a 23 nm overlay error budget at the 65 nm technology node by the year 2007. To meet the stringent requirement, a proof-of-concept adaptive alignment strategy for overlay improvement has
Autor:
David A. Muller, W. K. Waskiewicz, James Alexander Liddle, Anthony E. Novembre, G. P. Watson, Masis Mkrtchyan, L. R. Harriott
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 16:3385
Electron scattering in thin solid films used for the fabrication of masks for electron projection lithography, e.g., SCALPEL®, is investigated. We have developed an analytical model to calculate electron transmission through the mask membrane and im
Autor:
Lloyd R. Harriott
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:2130
There are several candidate lithography technologies for the postoptical era early in the next century. The scattering with angular limitation projection electron-beam lithography (SCALPEL) approach combines the high resolution and wide process latit
Autor:
M. Mkrtychan, L. C. Hopkins, Harry H. Wade, K. Brady, Steven D. Berger, A. H. Crorken, Myrtle I. Blakey, J. P. Custy, Joseph A. Felker, G. P. Watson, C. Biddick, W. F. Connelly, Reginald C. Farrow, Anthony E. Novembre, Milton L. Peabody, R. M. Camarda, K. S. Werder, R. Dimarco, David Lee Windt, R. G. Tarascon, Chester S. Knurek, H. A. Huggins, R. R. Freeman, J. S. Kraus, Stephen W. Bowler, L. Fetter, James Alexander Liddle, L. R. Harriott, W. K. Waskiewicz
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 14:3825
We have designed and constructed a proof‐of‐concept projection electron beam lithography system based on the scattering with angular limitation projection electron beam lithography principle. In this system, a thin membrane mask is used in a 4:1
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:2404
Charged particle image projection lithography systems have been proposed and are currently under development for design rules of 0.18 μm and below. Although charged particle projection lithography systems do not suffer from diffraction as a limit to
Autor:
B. Tseng, Lloyd R. Harriott, Robert Hull, T. Fullowan, C. W. Snyder, D. Bahnck, M. R. Frei, T. Y. Chiu, L. Hopkins
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:1514
Transmission electron microscopy (TEM) and focused ion beam sputtering have been used for investigations of microstructure and defect formation in AlGaAs/GaAs heterojunction bipolar transistors. The use of focused ion beam sputtering to prepare nearl