Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Haroon Ahmed"'
Publikováno v:
IEEE Transactions on Components, Hybrids, and Manufacturing Technology. 15:97-102
A technique for fabricating multichip modules (MCMs) by mounting chips in holes etched into silicon motherboards is described. With this approach the front faces of the chips are coplanar with the front of the motherboard, and, hence, the connections
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:1298
The nanotriode is a vacuum nanoelectronic device with a turn-on voltage for a field emission of ∼8 V, in which electrons are emitted from a metal nanotip with a radius ∼1 nm in an integrated vacuum chamber, over a distance of ∼100 nm. However,
Autor:
Sih Lee, William I. Milne, Haroon Ahmed, David G. Hasko, Kbk Teo, Gehan A. J. Amaratunga, Manishkumar Chhowalla
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21:996
We report on the fabrication of multiwalled carbon nanotube (MWCNT) bridges using poly-methylmethacrylate (PMMA) suspended dispersion. This method makes it possible to suspend nanotubes between metal electrodes, without any chemical etching of the su
Autor:
William I. Milne, Aun Shih Teh, Kbk Teo, L. A. W. Robinson, Manishkumar Chhowalla, Gehan A. J. Amaratunga, Haroon Ahmed, Seung-Beck Lee, David G. Hasko
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:2773
We report on the transport characteristics of individual multiwalled carbon nanotube/nanofibers (MWCNTs) grown by plasma-enhanced chemical vapor deposition (PECVD). The measurements were performed on individual MWCNT nanobridges suspended by sputtere
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:3481
The current–voltage and noise characteristics of vacuum nanoelectronic devices, including nanoscale field-emission diodes and vacuum nanotriodes, are presented. The turn-on voltage for field emission in these devices is about 8 V, independent of am
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 16:2938
Silicon nanopillars were fabricated by a novel natural lithography technique utilizing a gold colloidal particle monolayer as an etch mask. Using SiCl4 based reactive ion etching (RIE), silicon nanopillars with high density and uniformity in height a
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:2773
Novel field emission devices with dimensions an order of magnitude less than the elastic mean free path of electrons in air have been fabricated and tested at atmospheric pressure. It is well known that the operating voltage of field emission devices
Autor:
Haroon Ahmed
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:2101
Single electronics has the potential to overcome the limitations of complementary metal oxide semiconductor (CMOS) technology as device dimensions shrink towards the 10 nm scale. The basis of single electronics is the Coulomb blockade of electron tra
Autor:
Haroon Ahmed, Muhammad Mansoor Ahmed
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:306
Submicron T gates have been fabricated using the high resolution electron beam lithography technique. The footprint of the T gate has been written in high molecular weight poly-methyl methacrylate (PMMA), whereas the top of the T gate is defined in A
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:1519
The effects of the interfacial oxide layer in Schottky barrier junctions on submicron GaAs metal–semiconductor field‐effect transistors (MESFETs) have been investigated. These effects include a shift in threshold voltage and compression in transc